TK13A25D ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK13A45D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 450 ..
TK13A50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK13A50DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 500 ..
TK13A55DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK13A60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 2.5 ° ..
TLP545J ,gaas ired & photo-thyristorPIN CONFIGURATIONS (TOP VIE“)TLP56 " TLPE‘BJI.. NC 1: ANODBIt.. ANODE 2.. CATHODE3: CATHODE 3.. NCo ..
TLP545J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP545J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP548J ,Photocoupler (photothyristor output)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I 50 mA FFor ..
TLP549J ,Photocoupler (photothyristor output)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I 50 mA FFor ..
TLP550 ,Photocoupler Infrared LED + Photo ICTLP550 TOSHIBA Photocoupler Infrared LED Photo IC +TLP550 Degital Logic Isolation Unit in mm Li ..
TK13A25D
Power MOSFET (N-ch 150V<VDSS≤250V)
TK13A25D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK13A25DTK13A25DTK13A25DTK13A25D
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
