TK12X60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 600 ..
TK130F06K3 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristics Symbol MaxUnit 1 Thermal resistance, channel to case R 0.5 ..
TK13A25D ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK13A45D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 450 ..
TK13A50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK13A50DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 500 ..
TLP543J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP545 ,gaas ired & photo-thyristorPIN CONFIGURATIONS (TOP VIE“)TLP56 " TLPE‘BJI.. NC 1: ANODBIt.. ANODE 2.. CATHODE3: CATHODE 3.. NCo ..
TLP545J ,gaas ired & photo-thyristorPIN CONFIGURATIONS (TOP VIE“)TLP56 " TLPE‘BJI.. NC 1: ANODBIt.. ANODE 2.. CATHODE3: CATHODE 3.. NCo ..
TLP545J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP545J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP548J ,Photocoupler (photothyristor output)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I 50 mA FFor ..
TK12X60U
Power MOSFET (N-ch 500V<VDSS≤700V)
TK12X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK12X60U Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.38 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.89 mH, RG = 25 Ω, IAR = 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 0.74 g (typ.)
