TK12E60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-case thermal resistance R 0.868/W ..
TK12E60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TK12J60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 0.868 ..
TK12P60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK12Q60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK12X53D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 2.0 1.5 2.0 2.5 1 2 3 Characteristics Symbol Rating Un ..
TLP542G ,Photocoupler GaAs Ired & Photo-ThyristorTLP541G, TLP542G TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor TLP541G,TLP542G Programmable Co ..
TLP543 ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP543J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP545 ,gaas ired & photo-thyristorPIN CONFIGURATIONS (TOP VIE“)TLP56 " TLPE‘BJI.. NC 1: ANODBIt.. ANODE 2.. CATHODE3: CATHODE 3.. NCo ..
TLP545J ,gaas ired & photo-thyristorPIN CONFIGURATIONS (TOP VIE“)TLP56 " TLPE‘BJI.. NC 1: ANODBIt.. ANODE 2.. CATHODE3: CATHODE 3.. NCo ..
TLP545J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TK12E60U
Power MOSFET (N-ch 500V<VDSS≤700V)
TK12E60U
MOSFETs Silicon N-Channel MOS (DTMOS)
TK12E60UTK12E60UTK12E60UTK12E60U
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 7.0 S (typ.)
(3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
(4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
