TK12A60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 3.57 ..
TK12A60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK12A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK12E60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-case thermal resistance R 0.868/W ..
TK12E60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TK12J60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 0.868 ..
TLP542G ,Photocoupler GaAs Ired & Photo-ThyristorTLP541G, TLP542G TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor TLP541G,TLP542G Programmable Co ..
TLP543 ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP543J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TLP545 ,gaas ired & photo-thyristorPIN CONFIGURATIONS (TOP VIE“)TLP56 " TLPE‘BJI.. NC 1: ANODBIt.. ANODE 2.. CATHODE3: CATHODE 3.. NCo ..
TLP545J ,gaas ired & photo-thyristorPIN CONFIGURATIONS (TOP VIE“)TLP56 " TLPE‘BJI.. NC 1: ANODBIt.. ANODE 2.. CATHODE3: CATHODE 3.. NCo ..
TLP545J ,gaas ired & photo-thyristorTOSHIBA f0ISCREyrEv0pT0:rGaAsThe TOSHIBA TLP543J consists of a phot-thyristor opt1ea11y coupled to ..
TK12A60U
Power MOSFET (N-ch 500V<VDSS≤700V)
TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK12A60U Switching Regulator Applications • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.84 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight : 1.7 g (typ.)
