TK11A55D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 550 ..
TK11A60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 600 ..
TK11A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK12.5A , Topstek Current Transducer
TK12A45D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK12A50D ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 2.78 ..
TLP532 GB ,IRed & photo−transistor, for programmable controllers, AC / DC−input module and solid state relayElectrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min. Typ. Max.UnitForwa ..
TLP532. ,Photocoupler GaAs IRed & Photo .TransistorElectrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min. Typ. Max.UnitForwa ..
TLP532BL ,IRed & photo−transistor, for programmable controllers, AC / DC−input module and solid state relayPin Configurations (top view) TOSHIBA 11−7A8 Weight: 0.4g 1 2002-09-25 TLP531,TLP532 Maximum Rat ..
TLP532GR ,IRed & photo−transistor, for programmable controllers, AC / DC−input module and solid state relayElectrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min. Typ. Max.UnitForwa ..
TLP535 , GaAs IREO & PHOTO-TRANSISTOR
TLP535 , GaAs IREO & PHOTO-TRANSISTOR
TK11A55D
Power MOSFET (N-ch 500V<VDSS≤700V)
TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK11A55D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.94 mH, RG = 25 Ω, IAR = 11 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 1.7 g (typ.)
