TK100F06K3 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristics Symbol MaxUnit 1 Thermal resistance, channel to case R 0.83 ..
TK10415MTL ,CERAMIC SPEAKER DRIVE AMPLIFIER
TK10416MTL ,DYNAMIC SPEAKER DRIVE AMPLIFIER
TK10417MTL ,POWER AMPLIFIER
TK10420 ,DUAL CONVERSION FM IF AMPLIFER
TK10420D ,DUAL CONVERSION FM IF AMPLIFER
TLP250 ,Photocoupler GaAlAs Ired & Photo .ICTLP250 TOSHIBA Photocoupler GaAlAs Ired & Photo−IC TLP250 Transistor Inverter Inverter For Air ..
TLP250(D4) ,Photocoupler
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TK100F06K3
Power MOSFET (N-ch single 30V<VDSS≤60V)
TK100F06K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK100F06K3 Swiching Regulator, DC-DC Converter Applications
Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.0mΩ (typ.) High forward transfer admittance: |Yfs| = 174 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is below 175°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 11 μH, RG = 25 Ω, IAR = 100 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Note 4: 175°C refers to AEC-Q101.
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution
Unit: mm
Weight: 1.07 g (typ.)
