TK100E08N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK100E10N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK100F04K3 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics 2Characteristics Symbol MaxUnit 1 Thermal resistance, channel to case R 0.8 ..
TK100F04K3L ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK100F06K3 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristics Symbol MaxUnit 1 Thermal resistance, channel to case R 0.83 ..
TK10415MTL ,CERAMIC SPEAKER DRIVE AMPLIFIER
TLP250 ,Photocoupler GaAlAs Ired & Photo .ICTLP250 TOSHIBA Photocoupler GaAlAs Ired & Photo−IC TLP250 Transistor Inverter Inverter For Air ..
TLP250(D4) ,Photocoupler
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TK100E08N1
Power MOSFET (N-ch single 60V<VDSS≤150V)
TK100E08N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E08N1TK100E08N1TK100E08N1TK100E08N1
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
