TK09H90A ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V ..
TK100A06N1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK100A08N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK100A10N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK100E06N1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TK100E08N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TLP227GA. ,PHOTOCOUPLER PHOTO RELAYPin Configuration (top view) TOSHIBA 11-5B2 TLP227GA TLP227GA-2 Weight: 0.26 g (typ.) 1 4 1 8 2 3 ..
TLP2309 ,Photocoupler (photo-IC output)Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25) ) ) )a a a ..
TLP250 ,Photocoupler GaAlAs Ired & Photo .ICTLP250 TOSHIBA Photocoupler GaAlAs Ired & Photo−IC TLP250 Transistor Inverter Inverter For Air ..
TLP250(D4) ,Photocoupler
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TK09H90A
Power MOSFET (N-ch 700V<VDSS)
TK09H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(π-MOS IV)
TK09H90A Switching Regulator Applications Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 17.6 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 3.8 g (typ.)
