TJ50S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ60S04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ60S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ80S04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ8S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ9A10M3 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP170D. ,Photorelay (MOSFET output, 1-form-a)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Forward current I 50 mA FFo ..
TLP172A ,Photocoupler PhotorelayTLP172A TOSHIBA Photocoupler Photorelay TLP172A Telecommunications Unit: mmControl Equipment ..
TLP172G ,Photocoupler PhotorelayPin Configuration (top view)TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 1: Anode 2: Cathode 3: Drain ..
TLP174G ,Photocoupler PhotorelayPin Configuration (top view)TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 1: Anode 2: Cathode 3: Drain ..
TLP174GA. ,Photocoupler PhotorelayPin Configuration (top view)TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 1: Anode 2: Cathode 3: Drain ..
TLP176A ,PHOTOCOUPLER GaAs IRED & PHOTO-MOS FETPIN CONFIGURATION (TOP VIEW) SCHEMATIC1-Form-A1 : ANUUE2 l CATHODETLP176AMAXIMUM RATINGS (Ta = 25°C ..
TJ50S06M3L
Power MOSFET (P-ch single)
TJ50S06M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ50S06M3LTJ50S06M3LTJ50S06M3LTJ50S06M3L
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 10.3 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)
(3) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
