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TJ40S04M3LToshibaN/a30000avaiPower MOSFET (P-ch single)


TJ40S04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ50S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ60S04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ60S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ80S04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ8S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP166J ,Photocoupler GaAs Ired & Photo -TriacPin Configurations Trigger LED Current (mA) Type Marking Of 1 6 V =6V, Ta=25°C T (Note 1) Classific ..
TLP168J ,Photocoupler GaA .As IRed & Photo-TriacTLP168J TOSHIBA Photocoupler GaAℓAs IRed & Photo-Triac TENTATIVE TLP168J Triac Drive Unit in mm ..
TLP170D. ,Photorelay (MOSFET output, 1-form-a)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Forward current I 50 mA FFo ..
TLP172A ,Photocoupler PhotorelayTLP172A TOSHIBA Photocoupler Photorelay TLP172A Telecommunications Unit: mmControl Equipment ..
TLP172G ,Photocoupler PhotorelayPin Configuration (top view)TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 1: Anode 2: Cathode 3: Drain ..
TLP174G ,Photocoupler PhotorelayPin Configuration (top view)TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 1: Anode 2: Cathode 3: Drain ..


TJ40S04M3L
Power MOSFET (P-ch single)
TJ40S04M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ40S04M3LTJ40S04M3LTJ40S04M3LTJ40S04M3L
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(3) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
ic,good price


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