TJ20S04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ2995D , DDR Termination Regulator
TJ2996 , DDR Termination Regulator
TJ30S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ3964GSF5-1.2 , 1A Ultra Low Dropout Linear Regulator
TJ3964SF5-ADJ , 1A Ultra Low Dropout Linear Regulator
TLP126 ,Photocoupler GaAs Ired & Photo .TransistorTLP126 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP126 Programmable Controllers Unit i ..
TLP127 ,Photocoupler GaAs Ired & Photo .TransistorTLP127 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP127 Programmable Controllers Unit in ..
TLP127TPLUF , Programmable Controllers DC−Output Module Telecommunication
TLP127TPLUF , Programmable Controllers DC−Output Module Telecommunication
TLP130 ,Photocoupler GaAs Ired & Photo .TransistorTLP130 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP130 Programmable Controllers Unit in ..
TLP131 ,Photocoupler GaAs Ired & Photo .TransistorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max.UnitForwa ..
TJ20S04M3L
Power MOSFET (P-ch single)
TJ20S04M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ20S04M3LTJ20S04M3LTJ20S04M3LTJ20S04M3L
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(3) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
