TJ20A10M3 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V −100 ..
TJ20S04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ2995D , DDR Termination Regulator
TJ2996 , DDR Termination Regulator
TJ30S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ3964GSF5-1.2 , 1A Ultra Low Dropout Linear Regulator
TLP126 ,Photocoupler GaAs Ired & Photo .TransistorTLP126 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP126 Programmable Controllers Unit i ..
TLP127 ,Photocoupler GaAs Ired & Photo .TransistorTLP127 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP127 Programmable Controllers Unit in ..
TLP127TPLUF , Programmable Controllers DC−Output Module Telecommunication
TLP127TPLUF , Programmable Controllers DC−Output Module Telecommunication
TLP130 ,Photocoupler GaAs Ired & Photo .TransistorTLP130 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP130 Programmable Controllers Unit in ..
TLP131 ,Photocoupler GaAs Ired & Photo .TransistorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max.UnitForwa ..
TJ20A10M3
Power MOSFET (P-ch single)
TJ20A10M3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
TJ20A10M3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −100 V) Enhancement-model: Vth = −2.0 to −4.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −25 V, Tch = 25°C, L = 500 μH, RG = 25 Ω, IAR = −20 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Thermal Characteristics Unit: mm
Weight: 1.7 g (typ.)
