TJ11A10M3 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ150F04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TJ15P04M3 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ15S06M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TJ20A10M3 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V −100 ..
TJ20S04M3L ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP1243(C8) ,PHOTO-INTERRUPTER INFRARED LED + PHOTOTRANSISTORTLP1243(C8) TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP1243(C8) Copiers, Printer ..
TLP124BV ,IRed & photo−transistor, for programmable controllers, AC / DC−input module and telecommunicationTLP124 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP124 Office Machine Unit in mm Progra ..
TLP124BV ,IRed & photo−transistor, for programmable controllers, AC / DC−input module and telecommunicationPin Configurations (top view) 1 6 341 : Anode 3 : Cathode 4 : Emitter 6 : Collector 1 2002-09- ..
TLP124BV ,IRed & photo−transistor, for programmable controllers, AC / DC−input module and telecommunicationElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max.Unit100 ― ..
TLP126 ,Photocoupler GaAs Ired & Photo .TransistorTLP126 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP126 Programmable Controllers Unit i ..
TLP127 ,Photocoupler GaAs Ired & Photo .TransistorTLP127 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP127 Programmable Controllers Unit in ..
TJ11A10M3
Power MOSFET (P-ch single)
TJ11A10M3
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ11A10M3TJ11A10M3TJ11A10M3TJ11A10M3
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
(3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
