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TIS98
NPN General Purpose Amplifier
TIS98 Discrete POWER & Signal Technologies TIS98 TO-92 E B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO VCBO Collector-Base Voltage 80 V V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TIS98 P Total Device Dissipation 625 mW D Derate above 25 C 5.0 mW/ C ° ° Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC R Thermal Resistance, Junction to Ambient 200 °C/W θJA 1997
