TIS75 ,Industrial Power SuppliesTIS75TIS75N-Channel General Purpose Amplifier• This device is designed for low level analog switchi ..
TIS75 ,Industrial Power Suppliesapplications involving pulsed or low duty cycle operations.
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TLJW157M010R0200 , Tantalum Solid Electrolytic Chip Capacitors High CV Consumer Series
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TLK1101ERGPR ,11.3Gb/s Cable and PC Board Equalizer 20-QFN -40 to 100SLLS845A–AUGUST 2007–REVISED OCTOBER 2007The output can be disabled using the DIS pin. The DIS and ..
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TIS75
N-Channel Switch
TIS75 TIS75 N-Channel General Purpose Amplifier • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 54. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * T =25°C unless otherwise noted a Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdown Voltage I = 1.0μA, V = 0 -30 V (BR)GSS G DS Gate Reverse Current V = 15V, V = 0 -2.0 nA I GSS GS DS V = 15V, V = 0, T = 100°C -5.0 μA GS DS a (off) Drain Cutoff Leakage Current V = 15V, V = -10V -2.0 nA I D DS GS V = 15V, V = -10V, -5.0 μA DS GS T = 100°C a V (off) Gate-Source Cutoff Voltage V = 20V, I = 4.0nA -0.8 -4.0 V GS DS D On Characteristics * I Zero-Gate Voltage Drain Current * V = 15V, V = 0 8 80 mA DSS DS GS r (on) Drain-Source On Resistance V ≤ 0.1V, V = 0 60 Ω DS DS GS Small Signal Characteristics C Input Capacitance V = 0, V = -10V, f = 1.0MHz 18 pF iss DS GS C Reverse Transfer Capacitance V = 0, V = -10V, f = 1.0MHz 8.0 pF rss DS GS Switching Characteristics t Rise Time V (off) = -4.0V, V (on) = 0, 10 ns r GS GS I = 5.0mA, V = 10V D DS t Turn-On Time 10 ns on t Turn-Off Time 100 ns off * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 3.0% ©2004 Rev. A, June 2004
