TIP42CTU ,PNP Epitaxial Silicon TransistorApplications Complement to TIP41/41A/41B/41CTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial ..
TIP42CTU ,PNP Epitaxial Silicon TransistorTIP42 SERIES(TIP42/42A/42B/42C)TIP42 SERIES(TIP42/42A/42B/42C)Medium Power Linear Switching
TIP42C-TU ,PNP Epitaxial Silicon TransistorApplications Complement to TIP41/41A/41B/41CTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial ..
TIP47 ,Leaded Power Transistor General PurposeTIP47/TIP48TIP49/TIP50®SILICON NPN SWITCHING TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES■ N ..
TIP47. ,Leaded Power Transistor General Purpose3r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZEDP , POWER DISSIPATION (WATTS)Dt, TIME (s) μTIP47, ..
TIP47G , High Voltage NPN Silicon Power Transistors
TLFD600 , ADSL CODEC WITH INTEGRATED LINE DRIVER AND RECEIVER
TLFGE1100B , Panel Circuit Indicator
TLFGF1060 , Panel Circuit Indicator
TLG1002 , TOSHIBA LED LAMP
TLG1002 , TOSHIBA LED LAMP
TLG336T ,LED DISPLAY
TIP42CTU-TIP42C-TU
PNP Epitaxial Silicon Transistor
TIP42 SERIES(TIP42/42A/42B/42C) TIP42 SERIES(TIP42/42A/42B/42C) Medium Power Linear Switching Applications Complement to TIP41/41A/41B/41C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : TIP42 - 40 V CBO : TIP42A - 60 V : TIP42B - 80 V : TIP42C - 100 V V Collector-Emitter Voltage : TIP42 - 40 V CEO : TIP42A - 60 V : TIP42B - 80 V : TIP42C - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 6 A C I Collector Current (Pulse) -10 A CP I Base Current -2 A B P Collector Dissipation (T =25°C) 65 W C C P Collector Dissipation (T =25°C) 2 W C a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : TIP42 I = -30mA, I = 0 -40 V C B : TIP42A -60 V : TIP42B -80 V : TIP42C -100 V I Collector Cut-off Current CEO : TIP42/42A V = -30V, I = 0 -0.7 mA CE B : TIP42B/42C V = -60V, I = 0 -0.7 mA CE B I Collector Cut-off Current CES : TIP42 V = -40V, V = 0 -400 μA CE EB : TIP42A V = -60V, V = 0 -400 μA CE EB : TIP42B V = -80V, V = 0 -400 μA CE EB : TIP42C V = -100V, V = 0 -400 μA CE EB I Emitter Cut-off Current V = -5V, I = 0 -1 mA EBO EB C h * DC Current Gain V = -4V, I = -0.3A 30 FE CE C V = -4V, I = -3A 15 75 CE C V (sat) * Collector-Emitter Saturation Voltage I = -6A, I = -600mA -1.5 V CE C B V (sat) * Base-Emitter Saturation Voltage V = -4V, I = -6A -2.0 V BE CE C f Current Gain Bandwidth Product V = -10V, I = -500mA 3.0 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International Rev. A, February 2000
