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TIP36ASGSN/a38avaiLeaded Power Transistor General Purpose


TIP36A ,Leaded Power Transistor General Purpose3t, TIME μ (s)t, TIME μ (s)h , DC CURRENT GAINFETIP35A TIP35B TIP35C TIP36A TIP36B TIP36C100FOR ..
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TIP36A
Leaded Power Transistor General Purpose
Complementary Silicon
High-Power T ransistors
...for general–purpose power amplifier and switching
applications. 25 A Collector Current Low Leakage Current —
ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain —
hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product —
hfe = 3.0 min @ IC
= 1.0 A, f = 1.0 MHz
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(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle � 10%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
*ON Semiconductor Preferred Device
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