TIP32ATU ,PNP Epitaxial Silicon TransistorApplications Complement to TIP31/31A/31B/31CTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial ..
TIP32B ,General Purpose Amplifier and Switching ApplicationsTIP31A/31CTIP32A/32B/32C®COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION ..
TIP32C ,General Purpose Amplifier and Switching ApplicationsTIP31A/31CTIP32A/32B/32C®COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION ..
TIP32CTU , PNP Epitaxial Silicon Transistor
TIP32CTU , PNP Epitaxial Silicon Transistor
TIP33C ,Leaded Power Transistor General Purpose
TLE7259G ,The new LIN Transceiver generation with sleep mode/inhibit outpout, remote and local wake up capabilityFeatures• Transmission rate up to 20 kBaud Compatible to LIN specification 1.2, 1.3 and 2.0 Suppo ..
TLE7263E , Integrated HS-CAN, LIN, LDO and HS Switch System Basis Chip
TLE7263E , Integrated HS-CAN, LIN, LDO and HS Switch System Basis Chip
TLE7269G , Twin LIN Transceiver
TLE7270G , 5-V Low Drop Voltage Regulator
TLE7270G , 5-V Low Drop Voltage Regulator
TIP32ATU
PNP Epitaxial Silicon Transistor
TIP32 Series(TIP32/32A/32B/32C) TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications Complement to TIP31/31A/31B/31C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : TIP32 - 40 V CBO : TIP32A - 60 V : TIP32B - 80 V : TIP32C - 100 V V Collector-Emitter Voltage : TIP32 - 40 V CEO : TIP32A - 60 V : TIP32B - 80 V : TIP32C -100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 3 A C I Collector Current (Pulse) - 5 A CP I Base Current - 3 A B P Collector Dissipation (T =25°C) 40 W C C P Collector Dissipation (T =25°C) 2 W C a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : TIP32 I = - 30mA, I = 0 -40 V C B : TIP32A -60 V : TIP32B -80 V : TIP32C -100 V I Collector Cut-off Current CEO : TIP32/32A V = - 30V, I = 0 - 0.3 mA CE B : TIP32B/32C V = - 60V, I = 0 - 0.3 mA CE B I Collector Cut-off Current CES : TIP32 V = - 40V, V = 0 - 200 μA CE EB : TIP32A V = - 60V, V = 0 - 200 μA CE EB : TIP32B V = - 80V, V = 0 - 200 μA CE EB : TIP32C V = - 100V, V = 0 - 200 μA CE CE I Emitter Cut-off Current V = - 5V, I = 0 - 1 mA EBO EB C h * DC Current Gain V = - 4V, I = - 1A 25 FE CE C V = - 4V, I = - 3A 10 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 3A, I = - 375mA - 1.2 V CE C B V (sat) * Base-Emitter Saturation Voltage V = - 4V, I = - 3A - 1.8 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 500mA 3.0 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International Rev. A, February 2000
