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TIP147TTU
PNP Epitaxial Silicon Darlington Transistor
TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain : h = 1000@ V = - 4V, I = - 5A (Min.) FE CE C Industrial Use Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit C Symbol Parameter Value Units V Collector-Base Voltage : TIP145T - 60 V CBO : TIP146T - 80 V : TIP147T - 100 V B Collector-Emitter Voltage : TIP145T - 60 V V : TIP146T - 80 V CEO : TIP147T - 100 V V Emitter-Base Voltage - 5 V EBO R1 R2 I Collector Current (DC) - 10 A C E R18 ≅ kΩ I Collector Current (Pulse) - 15 A CP R20 ≅ .12kΩ I Base Current (DC) - 0.5 A B P Collector Dissipation (T =25°C) 80 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : TIP145T I = - 30mA, I = 0 - 60 V C B : TIP146T - 80 V : TIP147T - 100 V I Collector Cut-off Current CEO : TIP145T V = - 30V, I = 0 - 2 mA CE B : TIP146T V = - 40V, I = 0 - 2 mA CE B : TIP147T V = - 50V, I = 0 - 2 mA CE B I Collector Cut-off Current CBO : TIP145T V = - 60V, I = 0 - 1 mA CB E : TIP146T V = - 80V, I = 0 - 1 mA CB E : TIP147T V = - 100V, I = 0 - 1 mA CB E I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO BE C h DC Current Gain V = - 4V, I = - 5A 1000 FE CE C V = - 4V, I = - 10A 500 CE C V (sat) Collector-Emitter Saturation Voltage I = - 5A, I = - 10mA - 2 V CE C B I = - 10A, I = - 40mA - 3 V C B V (sat) Base-Emitter Saturation Voltage I = - 10A, I = - 40mA - 3.5 V BE C B V (on) Base-Emitter On Voltage V = - 4V, I = - 10A - 3 V BE CE C t Delay Time V = - 30V, I = - 5A 0.15 μs D CC C I = -20mA, I = 20mA t Rise Time B1 B2 0.55 μs R R = 6Ω L t Storage Time 2.5 μs STG t Fall Time 2.5 μs F ©2002 Rev. B, December 2002
