TIP147FTU ,PNP Epitaxial Darlington TransistorTIP145F/146F/147FTIP145F/146F/147FMonolithic Construction With Built In Base-Emitter Shunt Resistor ..
TIP147FTU ,PNP Epitaxial Darlington TransistorTIP145F/146F/147FTIP145F/146F/147FMonolithic Construction With Built In Base-Emitter Shunt Resistor ..
TIP147T , 80.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 10.000A Ic, 1000 hFE. Complementary TIP142TAPPLICATIONS 1■ GENERAL PURPOSE SWITCHING TO-220 ..
TIP147T , 80.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 10.000A Ic, 1000 hFE. Complementary TIP142T
TIP147T. , 80.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 10.000A Ic, 1000 hFE. Complementary TIP142T
TIP147TTU ,PNP Epitaxial Silicon Darlington TransistorTIP145T/146T/147TTIP145T/146T/147TMonolithic Construction With Built In Base-Emitter Shunt Resistor ..
TLE6389G50 ,Step-Down DC/DC ControllerFunctional descriptionThe TLE6389 step-down DC-DC switching controllers provide high efficiency ove ..
TLE6389G50 ,Step-Down DC/DC ControllerFunctional descriptionThe TLE6389 step-down DC-DC switching controllers provide high efficiency ove ..
TLE6389G50 ,Step-Down DC/DC ControllerFeatures• Operation from 5V to 60V Input Voltage• 100% Maximum Duty Cycle• Efficiency >90%• Output ..
TLE6389G50-1 ,Step-Down DC/DC Controller Step-Down DC/DC Controller TLE 6389Target Datasheet
TLE6389G50-1 ,Step-Down DC/DC Controller Step-Down DC/DC Controller TLE 6389Target Datasheet
TLE6389GV , Step - Down DC/DC Controller
TIP147FTU
PNP Epitaxial Darlington Transistor
TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain : h = 1000 @ V = -4V, I = -5A (Min.) FE CE C Industrial Use Complement to TIP140F/141F/142F TO-3PF 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit C Symbol Parameter Value Units V Collector-Emitter Voltage : TIP145F - 60 V CBO : TIP146F - 80 V : TIP147F - 100 V B V Collector-Emitter Voltage : TIP145F - 60 V CEO : TIP146F - 80 V : TIP147F - 100 V V Emitter-Base Voltage - 5 V EBO R1 R2 I Collector Current (DC) - 10 A C E R18 ≅ kΩ I Collector Current (Pulse) - 15 A CP R20 ≅ .12kΩ I Base Current (DC) - 0.5 A B P Collector Dissipation (T =25°C) 60 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : TIP145F I = - 30mA, I = 0 - 60 V C B : TIP146F - 80 V : TIP147F - 100 V I Collector Cut-off Current CEO : TIP145F V = - 30V, I = 0 - 2 mA CE B : TIP146F V = - 40V, I = 0 - 2 mA CE B : TIP147F V = - 50V, I = 0 - 2 mA CE B I Collector Cut-off Current CBO : TIP145F V = - 60V, I = 0 - 1 mA CB E : TIP146F V = - 80V, I = 0 - 1 mA CB E : TIP147F V = - 100V, I = 0 - 1 mA CB E I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO BE C h DC Current Gain V = - 4V, I = - 5A 1000 FE CE C V = - 4V, I = - 10A 500 CE C V (sat) Collector-Emitter Saturation Voltage I = - 5A, I = - 10mA - 2 V CE C B I = - 10A, I = - 40mA - 3 V C B V (sat) Base-Emitter Saturation Voltage I = - 10A, I = - 40mA - 3.5 V BE C B V (on) Base-Emitter On Voltage V = - 4V, I = - 10A - 3 V BE CE C t Delay Time V = - 30V, I = - 5A 0.15 μs D CC C I = -20mA, I = 20mA t Rise Time B1 B2 0.55 μs R R = 6Ω L t Storage Time 2.5 μs STG t Fall Time 2.5 μs f ©2002 Rev. B, December 2002
