TIP142TU ,NPN Epitaxial Silicon Darlington TransistorTIP140/141/142TIP140/141/142Monolithic Construction With Built In Base-Emitter Shunt Resistors ..
TIP142TU ,NPN Epitaxial Silicon Darlington TransistorTIP140/141/142TIP140/141/142Monolithic Construction With Built In Base-Emitter Shunt Resistors ..
TIP145 ,Leaded Power Transistor DarlingtonAPPLICATIONS 1■ LINEAR AND SWITCHING INDUSTRIALE ..
TIP145T ,PNP Epitaxial Silicon Darlington TransistorTIP145T/146T/147TTIP145T/146T/147TMonolithic Construction With Built In Base-Emitter Shunt Resistor ..
TIP146 ,Leaded Power Transistor DarlingtonAPPLICATIONS 1■ LINEAR AND SWITCHING INDUSTRIALE ..
TIP146T ,PNP Epitaxial Silicon Darlington TransistorTIP145T/146T/147TTIP145T/146T/147TMonolithic Construction With Built In Base-Emitter Shunt Resistor ..
TLE6368G1 , Multi-Voltage Processor Power Supply
TLE6368G1 , Multi-Voltage Processor Power Supply
TLE6389-2GV50 , Step-Down DC/DC Controller
TLE6389-2GV50 , Step-Down DC/DC Controller
TLE6389G 50-1 ,Step-Down DC/DC ControllerFeatures• Input voltage range from < 5V up to 60V• Output voltage versions: 5V fixed and adjustable ..
TLE6389G 50 ,Step-Down DC/DC ControllerFeatures• Operation from 5V to 60V Input Voltage• 100% Maximum Duty Cycle• Efficiency >90%• Output ..
TIP142TU
NPN Epitaxial Silicon Darlington Transistor
TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain : h = 1000 @ V = 4V, I = 5A (Min.) FE CE C Industrial Use Complement to TIP145/146/147 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage : TIP140 60 V CBO : TIP141 80 V : TIP142 100 V B V Collector-Emitter Voltage : TIP140 60 V CEO : TIP141 80 V : TIP142 100 V V Emitter-Base Voltage 5 V EBO R1 R2 I Collector Current (DC) 10 A C E I Collector Current (Pulse) 15 A R18 ≅ kΩ CP R20 ≅ .12kΩ I Base Current (DC) 0.5 A B P Collector Dissipation (T =25°C) 125 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO 60 V : TIP140 I = 30mA, I = 0 C B 80 V : TIP141 V 100 : TIP142 I Collector Cut-off Current CEO 2 mA : TIP140 V = 30V, I = 0 CE B 2 mA : TIP141 V = 40V, I = 0 CE B 2 mA : TIP142 V = 50V, I = 0 CE B I Collector Cut-off Current CBO 1 mA : TIP140 V = 60V, I = 0 CB E 1 mA : TIP141 V = 80V, I = 0 CB E 1 mA : TIP142 V = 100V, I = 0 CB E I Emitter Cut-off Current V = 5V, I = 0 2mA EBO BE C h DC Current Gain V = 4V, I = 5A 1000 FE CE C 500 V = 4V, I = 10A CE C V (sat) Collector-Emitter Saturation Voltage I = 5A, I = 10mA 2 V CE C B 3 V I = 10A, I = 40mA C B V (sat) Base-Emitter Saturation Voltage I = 10A, I = 40mA 3.5 V BE C B V (on) Base-Emitter ON Voltage V = 4V, I = 10A 3V BE CE C t Delay Time V = 30V, I = 5A 0.15 μs D CC C I = 20mA, I = -20mA t Rise Time B1 B2 0.55 μs R R = 6Ω L t Storage Time 2.5 μs STG t Fall Time 2.5 μs F ©2000 Fairchild Semiconductor International Rev. A, February 2000
