TIP141T ,NPN Epitaxial Silicon Darlington TransistorTIP140T/141T/142TTIP140T/141T/142TMonolithic Construction With Built In Base-Emitter Shunt Resistor ..
TIP142 ,Leaded Power Transistor DarlingtonTIP140/141/142TIP145/146/147®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ TIP141, TIP142, TI ..
TIP142. ,Leaded Power Transistor DarlingtonON SemiconductorNPNTIP140Darlington ComplementarySilicon Power Transistors*TIP141...designed for g ..
TIP142T , 80.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 10.000A Ic, 1000 hFE. Complementary TIP147TTIP142TTIP147T®COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS■ STMicroelectronics PREFERREDSALES ..
TIP142T , 80.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 10.000A Ic, 1000 hFE. Complementary TIP147T
TIP142TTU ,NPN Epitaxial Silicon Darlington TransistorTIP140T/141T/142TTIP140T/141T/142TMonolithic Construction With Built In Base-Emitter Shunt Resistor ..
TLE6288R ,Smart 6 Channel Peak&Hold Switch
TLE6288R . ,Smart 6 Channel Peak&Hold Switch
TLE6361G , Multi-Voltage Processor Power Supply
TLE6361G . , Multi-Voltage Processor Power Supply
TLE6363G ,Multifunctional Voltage Regulator and Watchdog
TLE6365G ,Voltage Regulator
TIP141T
NPN Epitaxial Silicon Darlington Transistor
TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In Base- Emitter Shunt Resistors • High DC Current Gain : h = 1000 @ V = 4V, I = 5A (Min.) FE CE C • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage : TIP140T 60 V CBO : TIP141T 80 V : TIP142T 100 V B Collector-Emitter Voltage : TIP140T 60 V V : TIP141T 80 V CEO : TIP142T 100 V V Emitter-Base Voltage 5 V EBO R1 R2 I Collector Current (DC) 10 A C E R18 ≅ kΩ I Collector Current (Pulse) 15 A CP R20 ≅ .12kΩ I Base Current (DC) 0.5 A B P Collector Dissipation (T =25°C) 80 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : TIP140T I = 30mA, I = 0 60 V C B : TIP141T 80 V : TIP142T 100 V I Collector Cut-off Current CEO : TIP140T V = 30V, I = 0 2 mA CE B : TIP141T V = 40V, I = 0 2 mA CE B : TIP142T V = 50V, I = 0 2 mA CE B I Collector Cut-off Current CBO : TIP140T V = 60V, I = 0 1 mA CB E : TIP141T V = 80V, I = 0 1 mA CB E : TIP142T V = 100V, I = 0 1 mA CB E I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO BE C h DC Current Gain V = 4V, I = 5A 1000 mA FE CE C V =4V, I = 10A 500 CE C V (sat) Collector-Emitter Saturation Voltage I = 5A, I = 10mA 2 V CE C B I = 10A, I = 40mA 3 V C B V (sat) Base-Emitter Saturation Voltage I = 10A, I = 40mA 3.5 V BE C B V (on) Base-Emitter ON Voltage V = 4V, I = 10A 3 V BE CE C t Delay Time V = 30V, I = 5A 0.15 μs D CC C I = 20mA t Rise Time B1 0.55 μs R I = -20mA B2 t Storage Time 2.5 μs STG R = 6Ω L t Fall Time 2.5 μs F ©2001 Rev. A1, June 2001
