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Partno	Mfg	Dc	Qty	Available	Descript
TIP131	POWER	N/a	29	avai	Leaded Power Transistor Darlington

TIP131 ,Leaded Power Transistor DarlingtonELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
TIP132 ,Leaded Power Transistor DarlingtonTIP132TIP135 TIP137®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERRE ..
TIP135 ,Leaded Power Transistor DarlingtonTIP132TIP135 TIP137®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERRE ..
TIP135 ,Leaded Power Transistor DarlingtonTIP132TIP135 TIP137®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERRE ..
TIP137 ,Leaded Power Transistor DarlingtonTIP132TIP135 TIP137®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERRE ..
TIP140 ,Leaded Power Transistor DarlingtonMAXIMUM RATINGSÎÎÎDARLINGTONTIP140 TIP141 TIP142COMPLEMENTARY SILICONÎÎÎÎTIP145 TIP146 TIP147Rating ..
TLE6266G ,Communication + Supply
TLE6266G ,Communication + Supply
TLE6266G ,Communication + Supply
TLE6266G .. ,Communication + Supply
TLE6282G , Dual Half Bridge Driver IC Compatible to very low ohmic normal
TLE6282G , Dual Half Bridge Driver IC Compatible to very low ohmic normal

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TIP131
Leaded Power Transistor Darlington
TIP131, TIP132 (NPN),
TIP137 (PNP)
Preferred Devices
Darlington Complementary
Silicon Power T ransistors
Designed for general−purpose amplifier and low−speed switching
applications. High DC Current Gain −
hFE = 2500 (Typ) @ IC
= 4.0 Adc Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus) = 80 Vdc (Min) − TIP131
= 100 Vdc (Min) − TIP132, TIP137 Low Collector−Emitter Saturation V oltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc
= 3.0 Vdc (Max) @ IC = 6.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package
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BASE
EMITTER
COLLECTOR
PNP
TIP137
BASE
EMITTER
COLLECTOR
NPN
TIP131
TIP132

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