TIP126TU ,PNP Epitaxial Darlington TransistorApplications• Complementary to TIP120/121/122TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial ..
TIP126TU ,PNP Epitaxial Darlington TransistorTIP125/126/127TIP125/126/127Medium Power Linear Switching
TIP127 ,Power Darlingtons for Linear and Switching Applications
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TIP127 ,Power Darlingtons for Linear and Switching ApplicationsTIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics ..
TIP127 ,Power Darlingtons for Linear and Switching ApplicationsTHERMAL CHARACTERISTICSÎÎCharacteristic Symbol Max UnitÎÎÎÎÎThermal Resistance, Junction to Case R ..
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TIP126TU
PNP Epitaxial Darlington Transistor
TIP125/126/127 TIP125/126/127 Medium Power Linear Switching Applications • Complementary to TIP120/121/122 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage : TIP125 - 60 V CBO : TIP126 - 80 V : TIP127 - 100 V B Collector-Emitter Voltage : TIP125 - 60 V V : TIP126 - 80 V CEO : TIP127 - 100 V V Emitter-Base Voltage - 5 V EBO R1 R2 I Collector Current (DC) - 5 A C E R18 ≅ kΩ I Collector Current (Pulse) - 8 A CP R20 ≅ .12kΩ I Base Current (DC) - 120 mA B P Collector Dissipation (T =25°C) 2 W C a Collector Dissipation (T =25°C) 65 W C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : TIP125 I = -100mA, I = 0 -60 V C B : TIP126 -80 V : TIP127 -120 V I Collector Cut-off Current CEO : TIP125 V = -30V, I = 0 -2 mA CE B : TIP126 V = -40V, I = 0 -2 mA CE B : TIP127 V = -50V, I = 0 -2 mA CE B I Collector Cut-off Current CBO : TIP125 V = -60V, I = 0 -1 mA CB E : TIP126 V = -80V, I = 0 -1 mA CB E : TIP127 V = -100V, I = 0 -1 mA CB E I Emitter Cut-off Current V = -5V, I = 0 -2 mA EBO BE C h * DC Current Gain V = -3V, I = 0.5A 1000 FE CE C V = -3V, I = -3A 1000 CE C V (sat) * Collector-Emitter Saturation Voltage I = -3A, I = -12mA -2 V CE C B I =-5A, I =-20mA -4 V C B V (on) * Base-Emitter ON Voltage V = -3V, I = -3A -2.5 V BE CE C C Output Capacitance V = -10V, I = 0, f = 0.1MHz 300 pF ob CB E * Pulse Test : PW≤300μs, Duty cycle ≤2% ©2001 Rev. A1, June 2001
