TIP112. ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSTHERMAL CHARACTERISTICSÎÎÎÎCASE 221A–06Characteristics Symbol Max UnitTO–220ABÎÎÎÎThermal Resistanc ..
TIP112G , Plastic Medium-Power Complementary Silicon Transistors
TIP113 ,Plastic medium-power complementary silicon transistorMAXIMUM RATINGS*Motorola Preferred DeviceÎÎÎÎÎTIP110, TIP111, TIP112,TIP115 TIP116 TIP117Rating Sym ..
TIP115 ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSTIP110/112TIP115/117®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERR ..
TIP115TU ,PNP Epitaxial Silicon Darlington TransistorTIP115/116/117TIP115/116/117Monolithic Construction With Built In Base-Emitter Shunt Resistors • Hi ..
TIP116 ,PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORSOrder this document**by TIP110/DSEMICONDUCTOR TECHNICAL DATA !** *"*#**!**$ * * !** *. . . designe ..
TLE6208-6G ,Smart Motorbridges + Driver ICsapplications. The part is based on Infineons®Smart Power Technology SPT which allows bipolar and CM ..
TLE6208-6G ,Smart Motorbridges + Driver ICsapplications• 0.6 A continuous (1 A peak) current per switch P-DSO-28-6• R ; typ. 0.8 Ω , @ 25 °C p ..
TLE6208-6G ,Smart Motorbridges + Driver ICsfeatures like Over- and Undervoltage-Lockout, Over-Temperature-Protection and the very low quiescen ..
TLE6209R ,Smart Motorbridges + Driver ICsFunctional DescriptionThe TLE 6209 R is an integrated power H-Bridge with D-MOS output stages for d ..
TLE6210G ,Vehicle Stability ICsFunctional DescriptionThe TLE 6210 and TLE 6211 are integrated circuit consisting of a 5 V voltage ..
TLE6211G ,Vehicle Stability ICsFeatures• 5 V, 800 mA linear regulator Undervoltage/overvoltage reset Undervoltage and overvoltag ..
TIP111-TIP112-TIP112.-TIP116
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
! "#
!$ - ! .. designed for general–purpose amplifier and low–speed switching applications. High DC Current Gain —
hFE = 2500 (Typ) @ IC = 1.0 Adc Collector–Emitter Sustaining Voltage — @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117 Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc Monolithic Construction with Built–in Base–Emitter Shunt Resistors TO–220AB Compact Package
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Figure 1. Power DeratingT, TEMPERATURE (°C)
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*Motorola Preferred Device