TIP105TU ,PNP Epitaxial Silicon Darlington TransistorTIP105/106/107TIP105/106/107Monolithic Construction With Built In Base-Emitter Shunt Resistors • Hi ..
TIP105TU ,PNP Epitaxial Silicon Darlington TransistorTIP105/106/107TIP105/106/107Monolithic Construction With Built In Base-Emitter Shunt Resistors • Hi ..
TIP106 ,Power Darlingtons for Linear and Switching Applications
TIP107 ,Power Darlingtons for Linear and Switching ApplicationsON SemiconductorNPNTIP100Plastic Medium-PowerComplementary Silicon Transistors*TIP101...designed f ..
TIP107G , Plastic Medium−Power Complementary Silicon Transistors
TIP107TU ,PNP Epitaxial Silicon Darlington TransistorTIP105/106/107TIP105/106/107Monolithic Construction With Built In Base-Emitter Shunt Resistors • Hi ..
TLE5205-2GP ,Smart Motorbridges + Driver ICsFeatures Delivers up to 5 A continuous 6 A peak current Optimized for DC motor management
TLE5206-2GP ,Smart Motorbridges + Driver ICsFeatures• Delivers up to 5 A continuous 6 A peak current Optimized for DC motor management
TLE5207 ,5-A DC Motor Driver with InhibitFeatures• Output current – 4 A (peak 5 A)• Inhibit with very low quiescent current (typ. 20 m A)• I ..
TLE5207G ,5 A DC Motor Driver 5-A DC Motor Driver with Inhibit TLE 5207Overview
TLE5208-6G ,1 A Hex-Half-Bridge/Double Six-Driverfeatures like Over- and Under-Voltage-Lockout, Over-Temperature-Protection and the very low quiesce ..
TLE5208-6G ,1 A Hex-Half-Bridge/Double Six-Driverapplications. The part is based on the Siemens®power technology SPT which allows bipolar and CMOS c ..
TIP105TU-TIP107TU
PNP Epitaxial Silicon Darlington Transistor
TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base- Emitter Shunt Resistors • High DC Current Gain : h =1000 @ V = -4V, I = -3A (Min.) FE CE C • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage TO-220 • Industrial Use 1 • Complementary to TIP100/101/102 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage : TIP105 - 60 V CBO : TIP106 - 80 V : TIP107 - 100 V B V Collector-Emitter Voltage : TIP105 - 60 V CEO : TIP106 - 80 V : TIP107 - 100 V V Emitter-Base Voltage - 5 V EBO R1 R2 I Collector Current (DC) - 8 A C R11 ≅ 0kΩ E I Collector Current (Pulse) - 15 A CP R20 ≅ .6kΩ I Base Current (DC) - 1 A B P Collector Dissipation (T =25°C) 2 W C a Collector Dissipation (T =25°C) 80 W C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : TIP105 I = -30mA, I = 0 -60 V C B : TIP106 -80 V : TIP107 -100 V I Collector Cut-off Current CEO : TIP105 V = -30V, I = 0 -50 μA CE B : TIP106 V = -40V, I = 0 -50 μA CE B : TIP107 V = -50V, I = 0 -50 μA CE B I Collector Cut-off Current CBO : TIP105 V = -60V, I = 0 -50 μA CB E : TIP106 V = -80V, I = 0 -50 μA CB E : TIP107 V = -100V, I = 0 -50 μA CB E I Emitter Cut-off Current V = -5V, I = 0 -2 mA EBO BE C h DC Current Gain V = -4V, I = -3A 1000 20000 FE CE C V = -4V, I = -8A 200 CE C V (sat) Collector-Emitter Saturation Voltage I = -3A, I = -6mA -2 V CE C B I = -8A, I = -80mA -2.5 V C B V (on) Base-Emitter ON Voltage V = -4V, I = -8A -2.8 V BE CE C C Output Capacitance V = -10V, I = 0, f = 0.1MHz 300 pF ob CB E ©2001 Rev. A1, June 2001
