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THD277HI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
THD277HIHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE# E81734 (N)).
APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR AND MONITORS SWITCH MODE POWER SUPPLIES
DESCRIPTIONThis deviceis manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and usesa Hollow Emitter structure enhance switching speeds.
The THD series are designed for use in
horizontal deflection circuitsin televisions and
monitors.
INTERNAL SCHEMATIC DIAGRAMDecember 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value UnitVCBO Collector-Base Voltage(IE=0) 1500 V
VCEO Collector-Emitter Voltage(IB=0) 700 V
VEBO Emitter-Base Voltage(IC =0) 10 V Collector Current 8 A
ICM Collector Peak Current(tp <5 ms) 15 A Base Current 5 A
IBM Base Peak Current(tp <5 ms) 8 A
Ptot Total DissipationatTc =25o C50 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
ISOWATT2181/5
THERMAL DATARthj-case Thermal Resistance Junction-case Max 2.5 o C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. UnitICES Collector Cut-off
Current (VBE =0)
VCE= 1500V 200 μA
IEBO Emitter Cut-off Current
(IC =0)
VEB =5V 50 μA
VEBO Emitter-Base Voltage IE =10 mA 10 V
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB =0)= 100 mA 700 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =4A IB =1A 0.9 V
VBE(sat)∗ Base-Emitter
Saturation Voltage =4A IB =1A 1.3 V
hFE∗ DC Current Gain IC =4A VCE =5V =4A VCE =5V Tj= 100oC
RESISTIVE LOAD
Storage Time
Fall Time
VCC =400V IC =4A
IB1 =1A IB2 =-2A 2.1
INDUCTIVE LOAD
Storage Time
Fall Time =4A f =15625Hz
IB1 =1A IB2 =-2A
Vceflyback= 1050 sin106
INDUCTIVE LOAD
Storage Time
Fall Time =4A f =31250Hz
IB1 =1A IB2 =-2A
Vceflyback= 1050 sin106
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
Safe Operating Area Thermal Impedance
THD277HI2/5
Current GainBase Emitter SaturationVoltage
Switching Time Inductive Load
Collector Emitter Saturation Voltage
Switching Time Inductive Load
Reverse Biased SOA
THD277HI3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 5.35 5.65 0.211 0.222 3.30 3.80 0.130 0.150 2.90 3.10 0.114 0.122 1.88 2.08 0.074 0.082 0.75 0.95 0.030 0.037 1.05 1.25 0.041 0.049 1.50 1.70 0.059 0.067 1.90 2.10 0.075 0.083 10.80 11.20 0.425 0.441 15.80 16.20 0.622 0.638 9 0.354 20.80 21.20 0.819 0.835 19.10 19.90 0.752 0.783 22.80 23.60 0.898 0.929 40.50 42.50 1.594 1.673 4.85 5.25 0.191 0.207 20.25 20.75 0.797 0.817 2.1 2.3 0.083 0.091 4.6 0.181
DIA 3.5 3.7 0.138 0.146
P025C/A
ISOWATT218 MECHANICAL DATA Weight: 4.9g (typ.) Maximum Torque (appliedto mountingflange) Recommended: 0.8 Nm; Maximum:1 Nm Thesideofthe dissipator mustbeflat within80 μm
THD277HI4/5
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grantedby implicationor otherwise underany patentor patentrightsof STMicroelectronics. Specification mentioned inthis publicationare
subject tochange without notice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are notauthorizedfor useas critical componentsinlife support devices orsystems without express written approvalof STMicroelectronics.
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