THD218DHI Fast Delivery |IC PHOENIX CO.,LIMITED

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THD218DHI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
THD218DHI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE# E81734 (N)) NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE.
APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR
DESCRIPTION
This devicesis manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and usesa Hollow Emitter structure enhance switching speeds.
The THD seriesis designedfor usein horizontal
deflection circuitsin televisions and monitors. INTERNAL SCHEMATIC DIAGRAM
December 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage(IE=0) 1500 V
VCEO Collector-Emitter Voltage(IB=0) 700 V
VEBO Emitter-Base Voltage(IC =0) 10 V Collector Current 7 A
ICM Collector Peak Current(tp <5 ms) 12 A Base Current 4 A
IBM Base Peak Current(tp <5 ms) 7 A
Ptot Total DissipationatTc =25o C50 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
ISOWATT218
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 o C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0)
VCE =1500V
VCE =1500V Tj= 125oC
IEBO Emitter Cut-off Current
(IC =0)
VEB =5V 300 mA
VCE(sat)∗ Collector-Emitter
Saturation Voltage =4A IB =1A 1.5 V
VBE(sat)∗ Base-Emitter
Saturation Voltage =4A IB =1A 1.3 V
hFE∗ DC Current Gain IC =4A VCE =5V =4A VCE =5V Tj= 100oC
INDUCTIVE LOAD
Storage Time
Fall Time=4A f= 15625 Hz
IB1 =1A IB2 =-2A
Vceflyback= 1050 sin106
0.48 Diode Forward Voltage IF =4A 2.5 V
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
Safe Operating Area Thermal Impedance
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Derating Curve
Collector Emitter Saturation Voltage
InductiveFall TimeI Current Gain
Base Emitter Saturation Voltage
InductiveStorage Time
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Reverse Biased SOA orderto saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 hasto be provided for the lowest gain hFEat
100oC (line scan phase). On the other hand,
negative base current IB2 must be providedto
turnoff the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occursat switch-off. Thereforeitis
essentialto determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently,Tj.A new setof curves have been
definedto give total power losses,ts andtf asa
function of IB2 at both 16 KHz and 32 KHz
scanning frequencies for choosing the optimum
negative drive. The test circuitis illustratedin
figure1.
InductanceL1 servesto control the slopeof the
negative base current IB2 to recombine the
excess carrierin the collector when base current still present, this would avoid any tailing
phenomenonin the collector current.
The valuesofL andC are calculated from the
following equations:L (IC)2=1C (VCEfly)2 ω=2πf= 1LC
Where IC= operating collector current, VCEfly=
flyback voltage,f= frequencyof oscillation during
retrace.
BASE DRIVE INFORMATION
Figure1: Inductive Load Switching Test Circuit.
THD218DHI
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 5.35 5.65 0.211 0.222 3.30 3.80 0.130 0.150 2.90 3.10 0.114 0.122 1.88 2.08 0.074 0.082 0.75 0.95 0.030 0.037 1.05 1.25 0.041 0.049 1.50 1.70 0.059 0.067 1.90 2.10 0.075 0.083 10.80 11.20 0.425 0.441 15.80 16.20 0.622 0.638 9 0.354 20.80 21.20 0.819 0.835 19.10 19.90 0.752 0.783 22.80 23.60 0.898 0.929 40.50 42.50 1.594 1.673 4.85 5.25 0.191 0.207 20.25 20.75 0.797 0.817 2.1 2.3 0.083 0.091 4.6 0.181
DIA 3.5 3.7 0.138 0.146
P025C/A
ISOWATT218 MECHANICAL DATA Weight: 4.9g (typ.) Maximum Torque (appliedto mountingflange) Recommended: 0.8 Nm; Maximum:1 Nm Thesideofthe dissipator mustbeflat within80 μm
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subject tochange without notice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are notauthorizedfor useas critical componentsinlife support devices orsystems without express written approvalof STMicroelectronics.
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Partno	Mfg	Dc	Qty	Available	Descript
THD218DHI	ST	N/a	352	avai	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR