THD200FI Fast Delivery |IC PHOENIX CO.,LIMITED

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THD200FI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
THD200FI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY VERYHIGH SWITCHING SPEED U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE# E81734 (N))
APPLICATIONS: HORIZONTAL DEFLECTION FOR
MONITORS
DESCRIPTION
The THD200FI is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and usesa Hollow Emitter
structureto enhance switching speeds.
The THD seriesis designedfor usein horizontal
deflection circuitsin televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
December 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage(IE=0) 1500 V
VCEO Collector-Emitter Voltage(IB=0) 700 V
VEBO Emitter-Base Voltage(IC =0) 10 V Collector Current 10 A
ICM Collector Peak Current(tp <5 ms) 20 A Base Current 5 A
IBM Base Peak Current(tp <5 ms) 10 A
Ptot Total DissipationatTc =25o C57 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
ISOWATT218
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.2 o C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0)
VCE =1500V
VCE =1500V Tj= 125oC
IEBO Emitter Cut-off Current
(IC =0)
VEB =5V 100 μA
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IC =0)= 100 mA 700 V
VEBO Emitter-Base Voltage
(IB =0) =10 mA 10 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =7A IB= 1.5A 1.5 V
VBE(sat)∗ Base-Emitter
Saturation Voltage =7A IB= 1.5A 1.3 V
hFE∗ DC Current Gain IC =7A VCE =5V =7A VCE =5V Tj =100oC
RESISTIVE LOAD
Storage Time
Fall Time
VCC =400V IC =7A
IB1 =1.5A IB2= 3.5A 2.1
INDUCTIVE LOAD
Storage Time
Fall Time=7A f= 31250 Hz
IB1 =1.5A IB2 =-3.5A
Vceflyback= 1200 sin106
INDUCTIVE LOAD
Storage Time
Fall Time =7A f =64 KHz
IB1 =1.5A IB2 =-3.5A
Vceflyback= 1200 sin106
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
THD200FI
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Safe Operating Area
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance Current Gain
Base Emitter Saturation Voltage
THD200FI
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Power Lossesat32 KHz
Power Lossesat64 KHz
Reverse Biased SOA
Switching Time Inductive Loadat32 KHz
(see figure2)
Switching Time Inductive Loadat64 KHz
(see figure2)
THD200FI
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orderto saturate the power switch and reduceconduction losses, adequate direct base current
IB1 hastobe providedfor the lowest gain hFEatTj 100oC (line scan phase). On the other hand,
negative base current IB2 mustbe provided turn
off the power transistor (retrace phase). Mostof
the dissipation, especially in the deflection
application, occursat switch-offsoitis essential determine the valueof IB2 which minimizes
power losses, fall timetf and, consequently, Tj.A
new setof curves have been definedto give total
power losses,ts andtf asa functionof IB2at both KHz and 64 KHz scanning frequenciesin
orderto choice the optimum negative drive. The
test circuitis illustratedin fig.1.
InductanceL1 servesto control the slopeof the
negative base current IB2in orderto recombine
the excess carriersin the collector when base
currentis still present, thus avoiding any tailing
phenomenonin the collector current.
The valuesofL andC are calculated from the
following equations:L (IC)2=1C (VCEfly)22πf= 1LC
WhereIC= operating collector current, VCEfly=
flyback voltage,f= frequencyof oscillation during
retrace.
BASE DRIVE INFORMATION
Figure1: Inductive Load Switching Test Circuit.
Figure2: Switching Waveformsina DeflectionCircuit.
THD200FI
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 5.35 5.65 0.211 0.222 3.30 3.80 0.130 0.150 2.90 3.10 0.114 0.122 1.88 2.08 0.074 0.082 0.75 0.95 0.030 0.037 1.05 1.25 0.041 0.049 1.50 1.70 0.059 0.067 1.90 2.10 0.075 0.083 10.80 11.20 0.425 0.441 15.80 16.20 0.622 0.638 9 0.354 20.80 21.20 0.819 0.835 19.10 19.90 0.752 0.783 22.80 23.60 0.898 0.929 40.50 42.50 1.594 1.673 4.85 5.25 0.191 0.207 20.25 20.75 0.797 0.817 2.1 2.3 0.083 0.091 4.6 0.181
DIA 3.5 3.7 0.138 0.146
P025C/A
ISOWATT218 MECHANICAL DATA Weight: 4.9g (typ.) Maximum Torque (appliedto mountingflange) Recommended: 0.8 Nm; Maximum:1 Nm Thesideofthe dissipator mustbeflat within80 μm
THD200FI
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Partno	Mfg	Dc	Qty	Available	Descript
THD200FI	ST	N/a	5546	avai	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR