THBT200S ,TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTIONFEATURESn DUAL BIDIRECTIONAL CROWBAR PROTECTION.n PEAK PULSE CURRENT :-I = 75 A, 10/1000 μs.PPn HOL ..
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THBT200S
TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
pplication Specific Discretes
A.S.D.™
THBT200STRANSIENT VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION DUALBIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT:
-IPP=75A, 10/1000 μs. HOLDING CURRENT= 150 mA min BREAKDOWN VOLTAGE= 200V min. BREAKOVER VOLTAGE= 290V max. MONOLITHIC DEVICE.
FEATURESThis monolithic protection device has been espe-
cially designedto protect subscriber line cards.The
THBT200 deviceis particularly suitableto protect
ring generator relay against transient
overvoltages.
DESCRIPTION
SCHEMATIC DIAGRAM
CCITT K20: 10/700μs 1kV
5/310μs 25A
VDE 0433: 10/700μs 2kV
5/310μs 50A
VDE 0878: 1.2/50μs 1.5kV
1/20μs 40A
FCC part68: 2/10μs 2.5kV
2/20μs 225A(*)
BELLCORE
TR-NWT-001089: 2/10μs 2.5kV
2/10μs 225A(*)
10/1000μs 1kV
10/1000μs 75A(*)
(*) with series resistorsor PTC.
COMPLIES WITH THE FOLLOWING STANDARDS:TM: ASD istrademarksof STMicroelectronics.
THBT200S
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C)
THERMAL RESISTANCE
Note1: Pulse waveform:
10/1000μstr=10μstp=1000μs
5/310μstr=5μstp=310μs
2/10μstr=2μstp=10μs
100 tr p t
THBT200S
ELECTRICAL CHARACTERISTICS (Tamb =25°C).
Note1: Seereferencetest circuit1for IBOand VBO parameters.
Note2: Seetestcircuit2.
Note3:VR=1V,F= 1MHz.
PARAMETERS RELATED TO ONE TRISIL (Between TIP and GNDor RING and GND)
THBT200S
REFERENCE TEST CIRCUIT1 FOR IBO and VBO parameters:
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT2.
THBT200S
FUNCTIONAL DESCRIPTION
APPLICATION CIRCUIT
Typical line card protection concept
THBT200S[Tj]H[Tj= 25˚C] 20406080 100 120 1400.0
Fig.1: Relative variationof holding current versus
junction temperature.
(A)TSM1E-2 1E-1 1E+0 1E+1 1E+2 1E+30
Fig.2: Surge peak current versus overload dura-
tion.
Fig.3: Peakon state voltage versus peakon state
current (typical values).
10 100 20010
Fig.4: Capacitance versus reverse applied volt-
age (typical values).