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THBT20011DRL
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
1/9
Application Specific Discretes
A.S.D.™
THBTxxx11D BIDIRECTIONAL CROWBAR PROTECTION
BETWEEN TIP AND GND, RING AND GND
AND BETWEEN TIP AND RING. PEAK PULSE CURRENT:
IPP= 30Afor 10/1000μs surge. HOLDING CURRENT:= 150mA. AVAILABLEIN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE.
FEATURESDedicated to telecommunication equipment
protection, these devices provide a triple
bidirectional protection function.
They ensure the same protection capability with
the same breakdown voltage bothin longitudinal
mode and transversal mode. particular attention has been givento the internal
wire bonding. The “4-point” configuration ensures reliable protection, eliminating overvoltages
introduced by the parasitic inductancesof the
wiring (Ldi/dt), especially for very fast transient
overvoltages.
Dynamic characteristics have been defined for
several typesof surges,in orderto meet the SLIC
maximum ratings.
DESCRIPTION
SCHEMATIC DIAGRAMTRIPOLAR OVERVOLTAGE
PROTECTION FOR TELECOM LINE
October 2003- Ed:7A
TR-NWT-001089: 10/1000μs 1000V
2/10μs 2500V
(first level)
2/10μs 5000V
(second level)
with line series resistorsof 56Ω
COMPLIES WITH BELLCORE STANDARDS:TM: ASDis trademarksof STMicroelectronics.
THBTxxx11D2/9
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C)
Note1: Pulse waveform:
10/1000μstr=10μstp=1000μs
100 tr p t
TEST CIRCUITS FOR IPP
THERMAL RESISTANCES
THBTxxx11D3/9
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
Note1: IR mesuared atVR guaranteesVBR >VR
Note2: Measuredat50Hz(1 cycle)test circuit1.
Note3: Seethe referencetest circuit2.
Note4: VR=1V,F= 1MHz.
STATIC PARAMETERS
Note5: Seetest circuit3 forVBO dynamic parameters;Rpisthe protection resistor located ontheline card.
DYNAMIC BREAKOVER VOLTAGES (Transversal mode)
THBTxxx11D4/9
TEST CIRCUIT1 for IBO and VBO parameters:
TEST CIRCUIT2 forIH parameter.
THBTxxx11D5/9
TEST CIRCUIT3 for IPP and VBO parameters:
THBTxxx11D6/9
APPLICATION NOTE1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
(A)TSM
Fig.1: Surge peak current versus overload dura-
tion.
