TH58NVG4S0FTA20 ,SLC NANDFEATURES • Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 ..
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TH58NVG4S0FTA20
SLC NAND
TH58NVG4S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2 PROM
DESCRIPTION The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages). The TH58NVG4S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read • Mode control Serial input/output Command control • Number of valid blocks Min 8032 blocks Max 8192 blocks Power supply VCC = 2.7V to 3.6V • Access time Cell array to register 30 µs max Serial Read Cycle 25 ns min (CL=100pF) • Program/Erase time Auto Page Program 300 µs/page typ. Auto Block Erase 3 ms/block typ. • Operating current Read (25 ns cycle) 30 mA max. Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 100 µA max (Weight: 0.53 g typ.)
