TDE1898CFPT ,0.5A high-side driver industrial intelligent power switchELECTRICAL CHARACTERISTICS (V = 24V; T = –25 to +85°C, unless otherwise specified)S ambSymbol Para ..
TDE1898CSP ,0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCHELECTRICAL CHARACTERISTICS (V = 24V; T = –25 to +85°C, unless otherwise specified)S ambSymbol Para ..
TDE1898CSP ,0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCHABSOLUTE MAXIMUM RATINGS (Minidip pin reference)Symbol Parameter Value UnitV Supply Voltage (Pins 3 ..
TDE1898RDP ,0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCHTDE1897RTDE1898R®0.5A HIGH-SIDE DRIVERINDUSTRIAL INTELLIGENT POWER SWITCH0.5A OUTPUT CURRENTMULTIPO ..
TDE1898RFP ,0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCHTDE1897RTDE1898R®0.5A HIGH-SIDE DRIVERINDUSTRIAL INTELLIGENT POWER SWITCH0.5A OUTPUT CURRENTMULTIPO ..
TDE1898RFPT ,0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCHELECTRICAL CHARACTERISTICS (V = 24V; T = –25 to +85°C, unless otherwise specified)S ambSymbol Para ..
TK5A53D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Ф0.2 M A 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK5A55D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Ф0.2 M A 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK5A60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 Ф0.2 M A Characteristics Symbol Rating Unit 2.54 2 ..
TK5A60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK5A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 3.125 ..
TK5A65DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TDE1898CFPT
0.5A high-side driver industrial intelligent power switch
TDE1897C
TDE1898C0.5A HIGH-SIDE DRIVER
INDUSTRIAL INTELLIGENT POWER SWITCH
0.5A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNAL CURRENT LIMITING
THERMAL SHUTDOWN
OPEN GROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING
TO VS - 45V FOR FAST DEMAGNETIZATION
DIFFERENTIAL INPUTS WITH LARGE COM-
MON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGE LOCKOUT WITH HYSTERESIS
OPEN LOAD DETECTION
TWO DIAGNOSTIC OUTPUTS
OUTPUT STATUS LED DRIVER
DESCRIPTIONThe TDE1897C/TDE1898C is a monolithic Intelli-
gent Power Switch in Multipower BCD Technol-
ogy, for driving inductive or resistive loads. An in-
ternal Clamping Diode enables the fast demag-
netization of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inher-
ently indistructible and suitable for general pur-
pose industrial applications.
BLOCK DIAGRAM
PIN CONNECTIONS (Top view)
ABSOLUTE MAXIMUM RATINGS (Minidip pin reference)
THERMAL DATA
TDE1897C - TDE1898C2/12
ELECTRICAL CHARACTERISTICS (VS = 24V; Tamb = –25 to +85°C, unless otherwise specified)
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. All test not dissipative.
TDE1897C - TDE1898C
Figure 1
DIAGNOSTIC TRUTH TABLE(*) According to the intervention of the current limiting block.
(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897
uses Diag2 to signal such condition, TDE1898 does not.
SOURCE DRAIN NDMOS DIODE
THERMAL CHARACTERISTICS (*)
SWITCHING CHARACTERISTICS (VS = 24V; RL = 48Ω) (*)
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested.
TDE1897C - TDE1898C4/12
APPLICATION INFORMATIONDEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 45 and 55V
(Vcl), provides safe and fast demagnetization of
inductive loads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 200mJ (at
Tj = 85°C).
To define the maximum switching frequency three
points have to be considered:
1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.
2) The total energy W dissipated in the device
during a demagnetization cycle (figg. 2, 3) is:
W = Vcl L [Io – Vcl – Vs log
1 + Vs
Vcl – Vs
Where:
Vcl = clamp voltage;
L = inductive load;
RL = resistive load;
Vs = supply voltage;
IO = ILOAD
3) In normal conditions the operating Junction
temperature should remain below 125°C.
Figure 2: Inductive Load Equivalent Circuit
Figure 3: Demagnetization Cycle Waveforms
Figure 4: Normalized RDSON vs. JunctionTemperature
TDE1897C - TDE1898C
