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TDA9309STMN/a70avaiVERTICAL DEFLECTION BOOSTER


TDA9309 ,VERTICAL DEFLECTION BOOSTERTDA9309VERTICAL DEFLECTION BOOSTER.POWER AMPLIFIER.FLYBACK GENERATOR.THERMAL PROTECTION.OUTPUT CURR ..
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TDA9309
VERTICAL DEFLECTION BOOSTER
TDA9309
VERTICAL DEFLECTION BOOSTER
November 1996
Output Stage Supply
Output
GND
Flyback Generator upply Voltage
Non-inverting Input
Tab connectedto pin4
Inverting Input
9309-01.EPS
PIN CONNECTIONS
HEPTAWATT

(Plastic Package)
ORDER CODE:
TDA9309
.POWER AMPLIFIER. FLYBACK GENERATOR.THERMAL PROTECTION.OUTPUT CURRENT UP TO 2.0APP.FLYBACK VOLTAGE UP TO 70V (on Pin5).SUITABLE FOR DC COUPLING APPLICATION
DESCRIPTION

Designedfor monitors and high performance TVs,
the TDA9309 vertical deflection booster delivers
flyback voltagesupto 70V.
The TDA9309 operateswithsuppliesupto 35Vand
provides upto 2App output currentto drive the
yoke.
The TDA9309is offeredin HEPTAWATT package.
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POWER
AMPLIFIER
THERMAL
PROTECTION6
FLYBACK
GENERATOR
INVERTING INPUT
NON-INVERTING INPUT
OUTPUT
GROUND
SUPPLY
VOLTAGE
OUTPUT
STAGE
SUPPLY
FLYBACK
GENERATOR
TDA9309
9309-02.EPS
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Supply Voltage (Pin2) (see note1) 40 V Flyback Peak Voltage (Pin6) (see note1) 70 V ,V7 Amplifier Input Voltage (Pins 1-7) (see note1) VS V Voltageat Pin3 (see note5) VS+ 3.0 V Maximum Output Peak Current (see notes2 and3) 1.5 A Maximum Sink Current (first partof flyback)(t< 1ms) 1.5 A Maximum SourceCurrent(t< 1ms) (see note2) 1.5 A
VESD Electrostatic Handlingforall pins (see note4) 2000/300 V
Toper Operating Ambient Temperature -20,+75 oC
Tstg Storage Temperature - 40,+ 150 oC Junction Temperature +150 oC
9309-01.TBL
Notes:
1. VersusPin4. The output current canreach 4Apeakfort≤ 10μs(upto 200Hz). Provided SOARis respected (see Figures1 and2). Equivalentto discharginga 100pFcapacitor through a1.5kΩ serial resistor/ 200pF capacitor through0Ω resistor. Thiswill occur during 1sthalfof flyback pulse.
THERMAL DATA
Symbol Parameter Value Unit

Rth(j-c) Junction-case Thermal Resistance Max. 3 o C/W Temperaturefor Thermal Shutdown 150 oC
Tjr Recommended Max. Junction Temperature 120 oC
9309-02.TBL
TDA9309

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ELECTRICAL CHARACTERISTICS
(VS= 35V,TA =25oC, unless otherwisespecified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Operating Supply Voltage Range 10 35 V Pin2 Quiescent Current I3 =0,I5 =0 9 20 mA Pin6 Quiescent Current I3 =0,I5 =0,V6= 35V 8 19 35 mA Max. Peak Output Current ±1A Amplifier Bias Current V1 =1V,V7= 2.2V - 0.6 - 1.5 μA Amplifier Bias Current V1= 2.2V,V7=1V - 0.6 - 1.5 μA
VIO Offset Voltage 3 mV
ΔVIO/dt Offset Drift versus Temperature -10 μV/oC Voltage Gain 80 dB
V5L Output Saturation Voltageto GND (Pin4) I5=1A 1 1.7 V
V5H Output Saturation Voltageto Supply (Pin6) I5=-1A 1.8 2.3 V
VD5-6 Diode Forward Voltage between Pins 5-6 I5=1A 1.3 2 V
VD3-2 Diode Forward Voltage between Pins 3-2 I3=1A 1.2 2 V
V3SL Saturation Voltageon Pin3 I3= 20mA 0.4 1 V
V3SH Saturation Voltageto Pin2 (2nd partof flyback)I3=-1A 2.1 2.8 V
9309-03.TBL
YOKE
POWER
AMPLIFIER
THERMAL
PROTECTION
+VS6
FLYBACK
GENERATOR
VREF
2.2V TDA9309
9309-03.EPS
APPLICATION CIRCUITS
COUPLING
TDA9309

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YOKE
POWER
AMPLIFIER
THERMAL
PROTECTION
+VS6
FLYBACK
GENERATOR
VREF
VREF VEE
TDA9309

Vertical
Position
Adjustment
9309-04.EPS
APPLICATION CIRCUITS
(continued) COUPLING-2
110 102 (A)C
@Tcase =25 C-1 t= 1ms= 10ms
t=100ms V (V)CE
9309-05.EPS
Figure1:
Output Transistors SOA
(for secondary breakdown)
100 50 75 100 125
ISB (%)
Tcase (°C)
9309-06.EPS
Figure2:
SecondaryBreakdownTemperature
Derating Curve
(ISB= secondary breakdown current)
TDA9309

4/6
PIN CONFIGURATION
9309-07.EPS
Figure3:
Pins 1-7S
9309-08.EPS
Figure4:
Pin36
9309-09.EPS
Figure5:
Pins 5-6
TDA9309

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Information furnishedis believed tobe accurate andreliable. However,SGS-THOMSON Microelectronics assumesno responsibility
forthe consequencesof use ofsuch informationnor forany infringementof patentsor other rightsof third parties which mayresult
fromits use.No licenceis grantedby implication orotherwise under anypatentor patent rightsof SGS-THOMSON Microelectronics.
Specifications mentionedin this publicationare subjectto change without notice. This publication supersedes and replacesall
information previously supplied.SGS-THOMSON Microelectronics productsarenot authorizedforuseas critical componentsinlife
support devicesor systems withoutexpress written approvalof SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics-All Rights Reserved
PurchaseofI
2C Components ofSGS-THOMSON Microelectronics, conveysa license underthe Philips2C Patent. Rightsto use these componentsinaI2C system,is granted provided thatthe systemconformsto
theI
2C Standard Specificationsas definedby Philips.
SGS-THOMSON Microelectronics GROUP OFCOMPANIES

Australia- Brazil -Canada- China- France- Germany- HongKong- Italy -Japan- Korea- Malaysia- Malta- Morocco
The Netherlands- Singapore- Spain- Sweden- Switzerland- Taiwan- Thailand- United Kingdom- U.S.A.
PM-HEPTV.EPS
PACKAGE MECHANICAL DATA:
HEPTAWATT
Dimensions Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
4.8 0.189 1.37 0.054 2.4 2.8 0.094 0.110 1.2 1.35 0.047 0.053 0.35 0.55 0.014 0.022 0.6 08 0.024 0.031 0.9 0.035 2.41 2.54 2.67 0.095 0.100 0.105 4.91 5.08 5.21 0.193 0.200 0.205 7.49 7.62 7.8 0.295 0.300 0.307 10.4 0.409 10.05 10.4 0.396 0.409 16.97 0.668 14.92 0.587 21.54 0.848 22.62 0.891 2.6 3 0.102 0.118 15.1 15.8 0.594 0.622 6 6.6 0.236 0.260 2.8 0.110 5.08 0.200
Dia. 3.65 3.85 0.144 0.152
HEPTV.TBL
TDA9309

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