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TCD1503C
CCD LINEAR IMAGE SENSOR
TOSHIBA
TCD1503C
TENTATIVE TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device)
TCI1503C
The TCD1503C is a high sensitive and low dark current
5000 elements CCD image sensor.
The sensor is designed for facsimile, imagescanner and
The device contains a row of 5000 elements photodiode
which provide a 16 lines/mm (400DPI) across a A3 size
paper. The device is operated by 5V (pulse), and 12V
power supply.
FEATURES
0 Number of Image Sensing Elements : 5000 elements
0 Image Sensing Element Size
: 7pm by 7pm on 7pm centers
0 Photo Sensing Region: High sensitive and low voltage
dark signal pn photodiode
0 Clock : 2 phase (5V)
0 Package : 22pin DIP
MAXIMUM RATINGS (Note 1)
WDlP22-C-d00-2.5dB
CHARACTERISTIC SYMBOL RATING UNIT
Clock Pulse Voltage Vp
Shift Pulse Voltage VSH -0.3--8
Reset Pulse Voltage VRS V
Clamp Pulse Voltage ch
Power Supply Voltage VOD -0.3--15
Operating Temperature Topr -2r-60 "C
Storage Temperature Tstg -40--100 "C
(Note 1) All voltage are with respect to SS terminals
(Ground).
Weight : 5.4g (Typ.)
PIN CONNECTIONS
fill' E
¢1o 10
(TOP VIEW)
961001 EBA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
of the buyer, when utilizing
1997-06-30 1/11
TOSHIBA TCD1503C
CIRCUIT DIAGRAM
CP RS 'li. ¢1E ¢2E
1 20 (iir, (ii) fiit
OD <3) j'''' I T
SIGNAL
052 'ia)- OUTPUT cco ANALOG SHIFT REGISTER 2
BUFFER
I SHIFT GATE 2 19)SH
03 trt C)
31:53 ...... ).'?,).eri,i,-r, ...PHOTO g,'t'lg'Jlg,t ...... 33
ththCI EEE“”“" DIODE 33383 EE
l SHIFT GATE 1
SIGNAL
OSI o- OUTPUT cco ANALOG SHIFT REGISTER 1
BUFFER
e o 5 (g) IIS) e, (O-Q)-
CP RS fil8 SS sb10 ¢2o SS SS
PIN NAME
¢1E,O Clock (Phase 1)
¢2E, O Clock (Phase 2)
7523 Final Stage Clock (Phase 2)
SH Shift Gate
RS Reset Gate
CP Clamp Gate
OSI Signal Output 1
052 Signal Output 2
OD Power
SS Ground
NC Non Connection
961001EBA2'
O The products described in this document are subject to foreign exchange and foreign trade control laws.
o The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T 9 information contained herein is subject to change without notice.
1997-06-30 2/11
TOSHIBA TCD1503C
OPTICAL/ ELECTRICAL CHARACTERISTICS
(Ta = 25°C, VOD = 12V, Vp =VSH =VRS =ch = 5V (PULSE), " =1MHz,
tINT (INTEGRATION TIME)=10mS, LIGHT SOURCE = DAYLIGHT FLUORESCENT LAMP,
LOAD RESISTANCE =100k0)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT NOTE
Sensitivity R 7.2 9 10.8 V/ lx.s
Photo Response Non Uniformity PRNU - 3 10 % (Note 2)
PRNU (3) - 4 10 mV (Note 8)
Saturation Output Voltage VSAT 1.5 2.0 - V (Note 3)
Saturation Exposure SE 0.14 0.22 - lx-s (Note 4)
Dark Signal Voltage VDRK - 1.0 2.5 mV (Note 5)
Dark Signal Non Uniformity DSNU - 1.0 2.5 mV (Note 5)
DC Power Dissipation PD - 350 400 mW
Total Transfer Efficiency TTE 92 - - %
Output Impedance 20 - 0.2 1 k0
Dynamic Range DR - 2000 - - (Note 6)
. V051 4.0 5.5 7.0
DC Signal Output Voltage vow 4.0 5.5 7.0 V (Note 7)
DC Differential Error Voltage |Vos1-Voszl - - 300 mV
Random Noise NDa - 0.6 - mV (Note 9)
(Note 2) Measured at 50% of SE (Typ.)
Definition of PRNU : PRNU= % x100(%)
Where Tis average of total signal outputs and Ax is maximum deviation from 7
under uniform illumination. (Channel 1)
In the case of 2500 elements (Channel 2), the condition is the same as above too.
(Note 3) VSAT is defined as minimum saturation output voltage of all effective pixels.
(Note 4) Definition of SE : SE = (Ix-s)
1997-06-30 3/11
TOSHIBA TCD1503C
(Note 5) VDRK is defined as average dark signal voltage of all effective pixels.
DSNU is defined as different voltage between VDRK and VMDK when VMDK is
maximum dark signal voltage.
VDRK is proportional to tINT (Integration Time).
So the shorter tINT condition makes wider DR values.
(Note 6) Definition of DR : DR--
(Note 7) DC signal output voltage and DC compensation output voltage are defined as
follows:
(Note 8) PRNU (3) is defined as maximum voltage with next pixel, where measured 5% of SE
(Typ.)
1997-06-30 4/11
TOSHIBA TCD1503C
(Note 9) Random noise is defined as the standard deviation (sigma) of the output level
difference between two adjacent effective pixels under no illumination (i.e. dark
condition) calculated by the following procedure.
VIDEO OUTPU VIDEO OUTPU
OUTPUT WAVEFORM
(EFFECTIVE PIXELS 200ns 200ns
UNDER DARK CONDITION) ______ - __::J:0.
PIXEL n PIXEL n+1 l
1) Two adjacent pixels (pixel n and n+1) in one reading are fixed as
measurement points.
2) Each of the output levels at video output periods averaged over 200
nanosecond period to get Vn and Vn + 1.
3) Vn +1 is subtracted from Vn to get AV.
nV=1/n-Vn+1
4) The standard deviation of AV is calculated after procedure 2) and 3) are
repeated 30 times (30 readings).
- 1 30 1 30 . - 2
= - . = - E AVI -tN
AV 30i=21|AVll J V 30i=1(| l )
5) Procedure 2), 3) and 4) are repeated 10 times to get 10 sigma values.
Tru-.,-,',. E aj
6) Fvalue calculated using the above procedure is observed v5times larger than
that measured relative to the ground level. So we specify the random noise as
follows.
Random noise =
1997-06-30 5/11
TOSHIBA TCD1503C
OPERATING CONDITION
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
"H" Level V¢1E, O 4.5 5 5.5
Clock Pulse Voltage "L" Level 1/p2E, O 0 - 0.5 V
. "H" Level 4.5 5 5.5
Final Stage Clock Voltage "L" Level V¢2B 0 - 0.5 V
Shift P I V It "H" Level V 4.5 5 5.5 V
I u se o age "L" Level SH o - 0.5
Reset Pulse Volta e "H" Level V 4.5 5 5.5 V
g "L" Level RS 0 - 0.5
"H" Level 4.5 5 5.5
Clamp Pulse Voltage "L" Level ch 0 - 0.5 V
Power Supply Voltage VOD 11.4 12.0 13.0 V
CLOCK CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Clock Pulse Frequency " - 1 20 MHz
Reset Pulse Frequency fRS - 1 20 MHz
Clock Ca acitance (Note 10) CPE - 350 - F
p CPO - 350 - p
Final Stage Clock Capacitance C¢B - 10 20 pF
Shift Gate Capacitance CSH - 30 - pF
Reset Gate Capacitance CRS - 10 20 pF
Clamp Gate Capacitance CCP - 10 20 pF
(Note 10) VOD=12V
1997-06-30 6/11
TCD1503C
TOSHIBA
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1997-06-30 7/11
TOSHIBA
TCD1503C
TIMING REQUIREMENTS
SH, ¢1 Timing
t2 t3 t4
SH 2 l
Ma o J I
SH, RS. CP Timing
SH , I
"lh f\
RS, CP period
(7E1 l)
¢2, RS, CP, OS Timing
H? 7 'it-
t8 t9 tlt)
"l -Z 3
t12 t13 t14
3:; E/ si E
¢1, sbil CROSS POINT
GND \ \
\1.5V(M|N.) N 1.5V(M|N.)
(Note 11) Each RS and CP pins put to Low level during this period.
1997-06-30 8/11
TOSHIBA TCD1503C
CHARACTERISTIC SYMBOL MIN. (Ngep'n) MAX. UNIT
Pulse Timing of SH and ¢1E, ¢1O t1, t5 200 500 - ns
SH Pulse Rise Time, Fall Time t2, t4 0 50 - ns
SH Pulse Width t3 1000 1500 - ns
ss2B Pulse Rise Time, Fall Time t6, t7 0 100 - ns
RS Pulse Rise Time, Fall Time t8, t10 0 20 - ns
RS Pulse Width t9 10 100 - ns
Video Data Delay Time (Note 13) t11 - 10 - ns
CP Pulse Rise Time, Fall Time t12, t14 0 20 - ns
CP Pulse Width t13 10 100 - ns
Pulse Timing of sbilB and CP t15 0 50 - ns
. . t16 0 100 -
Pulse Timing of RS and CP t17 10 100 - ns
Pulse Timing of SH and CP t18 200 - - ns
Pulse Timing of SH and RS t19 200 - - ns
(Note 12) TYP. is the case of fR5=1.0MH2
(Note 13) Load Resistance is 100k0
1997-06-30 9/11
TOSHIBA TCD1503C
PRECAUTIONS FOR USE OF CCD IMAGE SENSOR
l. Static Electricity
This device has some weakly terminals for static electricity. Therefor, please pay attention to treat
this device.
CCD Image Sensor is protected against static electricity, but inferior puncture mode device due to
static electricity is sometimes detected. In handling the device, it is necessary to execute the
following static electricity preventive measures, in order to prevent the trouble rate increase of
the manufacturing system due to static electricity.
a. Prevent the generation of static electricity due to friction by making the work with bare hands
or by putting on cotton gloves and non-charging working clothes.
b. Discharge the static electricity by providing earth plate or earth wire on the floor, door or
stand of the work room.
C. Ground the tools such as soldering iron, radio cutting plier or pincette.
It is not necessarily required to execute all precaution items for static electricity.
It is all right to mitigate the precautions by confirming that the trouble rate within the
prescribed range.
2 Window Glass
As the dust and station on the glass window of the package will cause black flow on the picture,
never fail to clean the glass surface before using. (Blow compressed vapor, and wipe off the dust,
and dirt with soft cloth or paper slightly moistened with alcohol).
Fully take care for the handling of the device as the window glass will break or a strong friction
is given to the window glass surface.
3. Incident Light
CCD image sensor has sensitivity in a wide range zone of light wave length, but its characteristics
willsometimes widely change when used with long wave length input light outside the visual
light zone.
1997-06-30 10/11
TOSHIBA TCD1503C
OUTLINE DRAWING
WDIP22-C-400-2.54B (A) Unit in mm
/Note I) 35(Ornx5000) - o.7as./ Ite )
1 1 .5i0.8
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(Note 1) No.1 SENSOR ELEMENT (SI) TO EDGE OF PACKAGE.
(Note 2) TOP OF CHIP TO BOTTOM OF PACKAGE.
(Note 3) GLASS THICKNES (n = 1.5)
Weight : 5.4g (Typ.)
1997-06-30 11/11
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