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TCD132D
CCD LINEAR IMAGE SENSOR
TOSHIBA
TCD132D
TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device)
The TCD132D is a 1024-elements linear image sensor
which includes CCD drive circuit and signal processing
circuit. The CCD drive circuit consists of the pulse
generator and the CCD driver; therefore it is posible to
get easy drive by applying simple pulses (PM, ¢CCD and
The signal processing circuit which consists of the clamp
circuit and S/H circuit and pre-amplifier.
TC’I132
FEATURES
0 Number of Image Sensing Elements : 1024 WDIP20-G-400-2.54
0 Image Sensing Element Size : 14pm by 14pm on 14pm Weight : 3.1g(Typ.)
centers
0 Photo Sensing Region : Low dark current pn photodiode
0 Clock : 3 Input pulses 5V
0 Internal Circuit : Clamp circuit (for optical black level reference)
Sample & hold circuit
Pre-amplifier
0 Package : 22 pin cerdip
MAXIMUM RATINGS (Note 1) PIN CONNECTIONS
CHARACTERISTIC SYMBOL RATING UNIT V
TP E 1 20 sour
Master Clock Voltage l/PM V W I: 19 VREF
CCD Clock Voltage V¢CCD V SH V
Shift Pulse Voltage VSH V E 18 AD
Reference Voltage VREF 0.3 15 V “C” 4 17 ss
Power Supply Voltage V - . V SS 5 16 Van
(Analog) AD vss 6 15 NC
Power Supply Voltage NC 7 14 NC
(Digital) VDD V NC
Operating Temperature Top, -2r-60 "C NC fl 13
Storage Temperature Tstg -40--100 "C NC 9 12 NC
. NC 10 1024 11 NC
(Note 1) All voltage are with respect to SS and I/SS
terminals(Ground). (TOP VIEW)
961001EBA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-06-30 1/12
TOSHIBA TCD132D
CIRCUIT DIAGRAM
VREF VDD VAD TP
(i?t r13 fish, fih,
V.:'f LW" V.'.Y V
CCD ANALOG SHIFT REGISTER 2 l
SHIFT GATE 2 l
SQUT (2o)--
SHIFT GATE 1 l
CCD ANALOG SHIFT REGISTER 1
PULSE GENERATOR DRIVER
\2/ 6/ tty I,.?.,) 'x.b' \17/
fbM SH ¢cco SS vss SS
PIN NAMES
¢M Master Clock
¢CCD CCD Clock
SH Shift Pulse
VREF Reference Voltage Input
SOUT Signal Output
VAD Power (Analog)
VDD Power(DigitaI)
SS Ground (Analog)
vss Ground (Digital)
TP Test Input
NC Non Connection
961001EBA2'
O The products described in this document are subject to foreign exchange and foreign trade control laws.
o The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T 9 information contained herein is subject to change without notice.
1997-06-30 2/12
TOSHIBA TCD132D
OPTICAL/ ELECTRICAL CHARACTERISTICS
(Ta = 25°C, VAD = VDD = 12V, WM = V¢CCD = VSH = 5V (PULSE), VREF = 5.0V, f¢CCD = 0.5MHZ,
tINT (INTEGRATION TIME)=10mS, LIGHT SOURCE = DAYLGIHT FLUORESCENT LAMP,
LOAD RESISTANCE =100kQ)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT NOTE
Sensitivity R 9 12 15 V/Ix-s (Note 2)
Photo Response Non Uniformity PRNU - - 10 % (Note 3)
Saturation Output Voltage VSAT 2 3 - V (Note 4)
Saturation Exposure SE 0.13 0.25 - lx-s (Note 5)
Dark Signal Non Uniformity DSNU - - 15 mV (Note 6)
Analog Current Dissipation IAD - 12 20 mA
Digital Current Dissipation IDD - 4 10 mA
Input Current of VREF IREF - 0.1 1 mA
Total Transfer Efficiency TTE 92 - - %
Output Impedance 20 - 1 2 kn
Clamp Error Voltage VERR - 100 200 V (Note 7)
(Note 2) Sensitivity for 2856K W-Iamp is 25V/Ixs(Typ.)
(Note 3) Measured at 50% of SE (Typ.)
Definition of PRNU : PRNU= % x100(%)
Where? is average of total signal outputs and Ax is the maximum deviation from?
under uniform illumination.
(Note 4) VSAT is defined as minimum saturation output voltage of all effective pixels.
T (lx s)
(Note 6) Definition of DSNU : DSNU=MAX-MIN(mV)
(Note 5) Definition of SE : SE=
SOUT ffC22r5. 'ff: 'ji'/jt' L,
1997-06-30 3/12
TOSHIBA TCD132D
(Note 7) Definition of VERR: 1/ERR--l1/REF-uwsl
Where VSIG is defined below.
1997-06-30 4/12
TOSHIBA TCD132D
OPERATING CONDITION
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Master Clock Volta e "H " Level V CS 5'0 5'5 V
g "L"Level ssh/l 0 0.5 0.8
"H " Level 4.5 5.0 5.5
CCD Clock Voltage "L " Le vel V¢CCD 0 0.5 0.8 V
Shift P I V It "H"Level V 4.5 5.0 5.5 V
I u se o age "L" Level SH o 0.5 0.8
Reference Voltage VREF 4.5 5.0 5.5 V
Power Supply Voltage (Analog) VAD 11 12 13 V
Power Supply Voltage ((Driver) VDD 11 12 13 V
Test Input Voltage VTp 0 0 0.8 V
CLOCK CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Master Clock Frequency f,on 0.4 2 4 MHz
Data Rate fDATA 0.2 1 2 MHz
CCD Clock Frequency f¢CCD 0.1 0.5 1.0 MHz
Master Clock Capacitance C¢M - - 10 pF
CCD Clock Capacitance C¢CCD - - 10 pF
Shift Pulse Capacitance CSH - - 10 pF
1997-06-30 5/12
TCD132D
TOSHIBA
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(smawau v9) memo Awwna
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lWHD DNIINLL
1997-06-30 6/12
TOSHIBA TCD132D
TIMING REQUIREMENTS
¢CCD -
_,,/ \_/—\._
T '7r7r7T7m77/77 7%”;
SOUT 'i"siiifjj'i), ,
SIGNAL
SIGNAL
'iitEiiiiiiiii VSIG (Note 8)
t6 HOLD PERIOD t7 HOLD PERIOD (Note 8) Refer to Note 7
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Pulse Timing of SH and ¢CCD t1, t3 0 20 60 ns
SH Pulse Width t2 250 - t8/2 ns
Pulse Timing of ¢IVI and ¢CCD t4, t5 0 20 60 ns
Aperture Delay t6, t7 - 80 120 ns
¢CCD Period t8 1 2 10 ps
1997-06-30 7/12
TOSHIBA
TCD132D
TYPICAL PERFORMANCE CURVES
SPECTRAL RESPONSE
RELATIVE RESPONSE
400 500 600 700 800 900
WAVE LENGTH l (nm)
MODULATION TRANSFER FUNCTION
OF X-DIRECTION
SPATIAL FREQUENCY (Cycles/mm)
0 7.1 14.3 21.4 28.6 35.7
1.2 1.2
1.0 1.0
0.8 u. 0.8
A=550nm\ E
0.6 0.6
0.4 0.4
0.2 0.2
0 0.2 0.4 0.6 0.8 1.0
NORMALIZED SPATIAL FREQUENCY
1000 1 100 1200
MODULATION TRANSFER FUNCTION
OF Y-DIRECTION
SPATIAL FREQU ENCY (Cycles/ mm)
7.1 14.3 21.4 28.6 35.7
l = 550nm
0 0.2 0.4 0.6 0.8 1.0
NORMALIZED SPATIAL FREQUENCY
1997-06-30 8/12
TOSHIBA
TCD132D
TYPICAL PERFORMANCE CURVES (Cont'd)
CURRENT DISSIPATION IAD (mA)
CURRENT DISSIPATION (ANALOG) -
OPERATING FREQUENCY
Ta =25°C
VAD=VDD=1ZV
W = VREF = 5V
0.5 1.0
CCD CLOCK FREQUENCY
CURRENT DISSIPATION IDD (mA)
CURRENT DISSIPATION (DIGITAL) -
OPERATING FREQUENCY
Ta=25°C
VAD=VDD= 12V
" = VREF = 5V
w.,-,---'''"
w.,,.-''''"'
w,,,,,,,,-''''"
w,,,-'''"
0.5 1.0 1.5
CCD CLOCK FREQUENCY (MHz)
1997-06-30 9/12
EXAMPLE OF OPERATING CIRCUIT
TC74H C74P (3 [2)
+ 5V +12V
TC74HC04P (4/6)
TCD1320
TP Sou1'
AD SIGNAL
ss OUTPUT
TC74HC163P (3 I1)
TC74H C08P
TC74HC04P
TOSHIBA
TCD132D
TOSHIBA TCD132D
CAUTION
1. Window Glass
The dust and stain on the glass window of the package degrade optical performance of CCD
sensor.
Keep the glass window clean by saturating a cotton swab in alcohol and lightly wiping the
surface, and allow the glass to dry, by blowing with filtered dry N2.
Care should be taken to avoid mechanical or thermal shock because the glass window is easily to
damage.
2. Electrostatic Breakdown
Store in shorting clip or in conductive foam to avoid electrostatic breakdown.
3. Incident Light
CCD sensor is sensitive to infrared light.
Note that infrared light component degrades resolution and PRNU of CCD sensor.
4. Lead Frame Forming
Since this package is not stout against mechanical stress, you should not reform the lead frame.
We recommend to use a IC-inserter when you assemble to PCB.
1997-06-30 11/12
TOSHIBA TCD132D
OUTLINE DRAWING
WDIP20-G-400(B) Unit : mm
7.1 meme l) 14.3(14p m x 1024) "thNO.1 (Note 3)
20 11 'I
""'"'-'"= - Ct
'n. tl o v.2
a q - . .
Il th "
q -....,.....= , - Mt
a 26.0i0.5 _
CO I l - <
d - ts T is"
4l v‘m cq
.3 I l I to 'o.
l l I a
t''t" t
1 .57TYP 0.47i0.15 _
----. -jss.vi.c.j'litsiizi:,
l.31M.1
(Note 1) No.1 SENSOR ELEMENT (SI) TO EDGE OF PACKAGE.
(Note 2) TOP OF CHIP TO BOTTOM OF PACKAGE.
(Note 3) GLASS THICKNES (n = 1.5)
Weight : 3.1g (Typ.)
1997-06-30 12/12
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