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TC7WG00FC
L-MOS LVP series
TC7WG00FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG00FC Dual 2-Input NAND Gate
Features High output current : ±8 mA (min) at VCC = 3 V Super high speed operation : tpd = 2.5 ns (typ.)
at VCC = 3.3 V, 15pF Operating voltage range : VCC = 0.9 to 3.6 V 5.5-V tolerant inputs 3.6-V power down protection outputs
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: VCC = 0 V
Note 2: High or Low state.
Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
Note 4: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 11.56 mm2)
Weight: 0.002 g (typ.)
Product name 1B 2Y GND
1Y 2B 2AVcc
2 3 4
7 6 58
