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TC7SG00FUTOSHIBAN/a30000avaiL-MOS LVP series


TC7SG00FU ,L-MOS LVP seriesElectrical Characteristics DC Characteristics Ta = 25°C Ta = −40 to 85°C Characteristics Symbol T ..
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TC7SG00FU
L-MOS LVP series
TC7SG00FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG00FU

2 Input NAND Gate
Features
High output current: ±8 mA (min) at VCC = 3 V
• High-speed operation: tpd = 2.5 ns (typ.)
at VCC = 3.3 V,15pF Operating voltage range: VCC = 0.9 to 3.6 V 5.5-V tolerant inputs. 3.6-V power down protection output.
Marking Pin Assignment (top view)

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the
operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. Do not exceed IOUT of absolute maximum ratings
Weight: 0.006 g (typ.)
Product name
IN A 2
GND 3
IN B 1 5 VCC
4 OUT Y
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