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TC7S66F-TC7S66FU
BILATERAL SWITCH
TOSHIBA
TC7S66F/FU
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TC7566F, TC7566FU
BILATERAL SWITCH
The TC7S66 is a high Speed CZMOS BILATERAL SWITCH
fabricated with silicon gate CZMOS technology.
It consists of a high speed switch capable of controlling
either digital or analog signals while maintaining the
CZMOS low power dissipation.
Control input (C) is provided to control the switch
The switch turns ON while the C Iinput is high, and the
switch turns OFF while low.
Input is equipped with protection circuits against static
discharge or transient excess voltage.
FEATURES
0 High Speed ..............
0 Low Power Dissipation -
0 High Noise Immunity
Low ON Resistance ......
Low T.H.D ...............
......... t/pd = 7ns (Typ.) at
......... ICC --IPA (Max.) at
Ta = 25°C
......... VNIH =VNIL
= 28% VCC (Min.)
......... RON =1oon (Typ.)
at VCC = 9V
......... THD = 0.05% (Typ.)
at Vcc = 5V
Pin and Function Compatible with TC4S66F
TC7566F
SSOP5-P-O.95
TC7566FU
SSOPS-P-0.65A
Weight SSOPS-P-O.95 20.0169 (Typ.)
SSOPS-P-0.65A: 0.006g (Typ.)
MAXIMUM RATINGS MARKING
CHARACTERISTIC SYMBOL RATING UNIT Type Name
DC Supply Voltage VCC -0.5--13 V Fl p" f
Control Input Voltage VIN -0.r-Vcc+0.5 V E 9
Swith I/O Voltage VI/O -0.r-Vctrr0.5 V lzl lzl Id
Control Diode Current 'CK :20 mA
Output Diode Current 'IOK :20 mA
Through I/O Current IT 112.5 mA
DC Vcc/Ground Current ICC 1'25 mA
Power Dissipation PD 200 mW
Storage Temperature Tstg -65--150 "C
Lead Temperature (10s) TL 260 "C
2001 -05-31
TOSHIBA
LOGIC DIAGRAM
PIN ASSIGNMENT (TOP VIEW)
TC7S66F/FU
TRUTH TABLE
C.-... xl CONTROL SWITCH FUNCTION
l/ii-Ps-, i-Ps-o/l IN/tou)-; Elvcc
OUT/INI ' H ON
l 1 L OFF
GNDI ECONT
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VCC 2--12 V
Control Input Voltage VIN tr-Vcc V
Switch I/O Voltage Vl/O 0~Vcc V
Operating Temperature Topr -40--85 "C
0--1000 (VCC = 2.0V)
. . o-- 500 (Vcc=4.5V)
Input Rise and Fall Time tr, tf o-- 400(Vcc=6.0V) ns
o-- 250 (VCC=10.0V)
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITION Ta =25 C Ta = -40--85 C UNIT
Vcc MIN. TYP. MAX MIN. MAX.
2.0 1.5 - 1.5 -
High-level Control V 4.5 3.15 - 3.15 -
Input Voltage IHC - 9.0 6.3 - 6.3 -
12.0 8.4 - 8.4 - V
2.0 - 0.5 - 0.5
Low-Level Control V - 4.5 - 1.35 - 1.35
Input Voltage ILC 9.0 - 2.7 - 2.7
12.0 - 3.6 - 3.6
VIN = VIHC 4.5 192 340 - 400
VI /0 =VCC to GND 9.0 110 170 - 200
VI/Oé1mA 12.0 90 160 - 180
ON Resistance RON - 2.0 320 - - - n
x'N‘YQ/"C or GND 4.5 140 200 - 260
vI/O;1§1CA 9.0 100 150 - 190
l/O'-" 12.0 90 140 - 180
Input/Output VOS=VCC or GND
Leakage Current 'OFF V|5=GND or VCC 12.0 - i 100 - i 1000 nA
(SWITCH OFF) VIN --lhLc
2 2001-05-31
TOSHIBA TC7S66F/FU
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITION Ta =25 C Ta = -40-85 C UNIT
Vcc MIN. TYP. MAX. MIN. MAX.
Switch Input
Leakage Current VOS=VCC or GND + +
(sw ON, Output 1.2 VIN-O/IHC 12.0 - - -100 - -1000
OPEN) nA
Control Input
= - - + - +
Current IIN VIN VCC or GND 12.0 -100 11000
. . 6.0 - 1.0 - 10.0
25:32:? Device lcc VIN =Vcc or GND 9.0 - - 4.0 - 40.0 pA
12.0 - 8.0 - 80.0
AC ELECTRICAL CHARACTERISTICS (CL=50pF, Input tr=tf=6ns)
PARAMETER SYMBOL TEST CONDITION Ta =25 C Ta = -40--85 C UNIT
Vcc MIN. TYP. MAX. MIN. MAX.
. 2.0 - 20 75 - 100
Phase difference 4.5 - 7 15 - 20
between input 5291-0 - 9 0 - 4 12 - 15
and output 12.0 - 4 11 - 14
2.0 - 20 150 - 190
Output Enable tPZL - 4.5 - 13 30 - 38
Time tPZH RL =1kf1 9.0 - 9 18 - 33 ns
12.0 - 8 18 - 27
2.0 - 40 170 - 220
Output Disable tpLZ - 4.5 - 11 35 - 44
Time tpHg RL --lkn 9.0 - 10 30 - 38
12.0 - 9 27 - 33
2.0 - 30 - - -
Maximum Control RL=1kf1 4.5 - 30 - - -
- CL=15pF MHz
Input Frequency V =1/2 V 9.0 - 30 - - -
OUT-- CC 12.0 - 30 - - -
Control Input -
Capacitance CIN - - - 5 10 - 10
Switch Terminal
- - - - - - F
Capacitance CI/O 6 p
Feedthrough
Capacitance Qos - - - 0.5 - - -
Power Dissipation -
Capacitance CPD (Note 1) - - 15 - - -
Note 1 :
Average operating current can be obtained by the equation :
lcc(opr) = CPD'VCC'fIN + lcc
CPD is defined as the value of internal equivalent Capacitance which is
the operating current consumption without load.
calculated from
2001 -05-31
TOSHIBA TC7S66F/FU
ANALOG SWITCH CHARACTERISTICS (GND = 0V, Ta = 25°C)
PARAMETER SYMBOL TEST CONDITION V TYP. UNIT
fiN =1kH2 VIN = 4Vpp (VCC = 4.5V) 4 5 0 05
- RL =10kQ VIN = 8Vpp (VCC = 9.0V) . . %
9.0 0.04
CL = 50pF
Adjust fIN voltage to obtain OdBm at vos
Increase fIN frequency until dB Meter reads 4.5 200
Total Harmonic
Distortion (T.H.D)
Maximum Propagation
Frequency {MAX -3dB. RL=500 CL=10pF, 9.0 200 MHz
(SWITCH ON) fIN =1MHz, Sine Wave
Vin is ceintered at Vcc/il Adjust input for
Feedthrough OdBm 4.5 - 60 dB
(SWITCH ON) - RL = 6000, CL = 50pF 9.0 - 60
fIN =1MHz, Sine Wave
Crosstalk RL = 6000, CL = 50pF 4.5 60 V
(CONTROL SWITCH) - IN =1MHZ, PULSE (tr=tf= 6ns) 9.0 100 m
Note : These characteristics are determined by design of devices.
4 2001-05-31
TOSHIBA TC7S66F/FU
PACKAGE DIMENSIONS
SSOPS-P-0.95 Unit : mm
q----------'-"-----'
1 - 5 Y"''"
04 'gl. 55'
R 3 . - "t
a? tn CD
N ci 4 ,
04".1 Si'
R'? F.
T""" On
p 2t r-f " 1-,-ici,v-
Weight : 0.0169 (Typ.)
5 2001-05-31
TOSHIBA TC7S66F/FU
PACKAGE DIMENSIONS
SSOPS-P-0.65A Unit : mm
2.0i0.2
1.31ro.1
0.65, {0.65
J" ”P 7‘
Fl |$| +
Weight : 0.006g (Typ.)
6 2001-05-31
TOSHIBA TC7S66F/FU
RESTRICTIONS ON PRODUCT USE
000707EBA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
7 2001-05-31
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