TC75W55FK ,DUAL OPERATIONAL AMPLIFIERTC75W55FU/FKI‘lv-Ivvl v, I‘IUI-vvllTC75W55 is a CMOS operational amplifier with low TC75W55FUsupply ..
TC75W55FU ,DUAL OPERATIONAL AMPLIFIERTC75W55FU/FKI‘lv-Ivvl v, I‘IUI-vvllTC75W55 is a CMOS operational amplifier with low TC75W55FUsupply ..
TC75W56FK ,Dual ComparatorTC75W56FU/FK TOSHIBA Cmos Linear Integrated Circuit Silicon Monolithic TC75W56FU,TC75W56FK Dual C ..
TC75W56FU ,Dual ComparatorFeatures Low supply current: IDD = 20µA (typ.) Single power supply operation Wide common mode ..
TC75W57FK ,Dual ComparatorTC75W57FU/FK TOSHIBA Cmos Linear Integrated Circuit Silicon Monolithic TC75W57FU,TC75W57FK Dual C ..
TC75W57FU ,Dual ComparatorFeatures Low supply current: IDD = 200µA (typ.) Single power supply operation Wide common mod ..
TDA1596T ,IF amplifier/demodulator for FM radio receiversFeatures• Simulates behaviour of a ratio detector (internal field strength and detuning-dependent v ..
TDA1600 , MULTI-FUNCTION OSCILLATOR SWITCH FOR AN AUDIO CASSETTE RECORDER
TDA1602A , Double-deck playback/record IC
TDA1670A ,35V; 100mA; 30W; vertical deflection circuitBLOCK DIAGRAM
C)+Vs
BLANKING
our
BLANK
GENERATOR
AND CRT
PROTECTION
J _ I lvoxs
TH ..
TDA1670A. ,35V; 100mA; 30W; vertical deflection circuitapplications also in
portable CTVs, BW TVs, monitors and displays.
CONNECTION DIAGRAM (top view ..
TDA1675 ,VERTICAL DEFLECTION CIRCUITELECTRICAL CHARACTERISTICS (V = 35V, T = 25 C, unless otherwise specified)S ambSymbol Parameter T ..
TC75W55FK-TC75W55FU
DUAL OPERATIONAL AMPLIFIER
TOSHIBA TC75W55FU/FK
TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
TC75W55FU, TC75W55FK
DUAL OPERATIONAL AMPLIFIER
TC75W55 is a CMOS operational amplifier with low TC75W55FU
supply voltage, low supply current.
FEATURES
0 Low supply voltage VDD-- 10.9~3.5V or 1.8~7V
0 Low supply current IDD (VDD=3V) =20PA (Typ.)
0 The internally phase compensated operational amplifier. SSOP8-P-0.65
TC75W55FK
0 Small package
MAXIMUM RATINGS (Ta =25°C)
CHARACTERISTIC SYMBOL RATING N
Supply Voltage VDD, I/ss 7 V
Differential Input Voltage DVIN LF? V
Input Voltage VIN 1/DD--VSS V
. . . 250 (SM8) SSOP8-P-0.50A
Power Dissipation PD 200 (U58) mW £833? 0 65 o 021 (T )
. - _ 0 - - . : . g yp.
Operating Temperature Topr 40 85 C SSOP8-P-0.50A : 0.01g (Typ.)
Storage Temperature Tstg - 55--125 ''C
MARKING (TOP VIEW) PIN CONNECTION (TOP VIEW)
SM8 U58 VDD OUT l?rl(-) IN(+)
Fl, [El Fllil El lil
Type Name
5 W 5 5 Lot No. 55V5V [f
F‘T‘V att'1'i"
iillilil
OUT IN(-) IN(s) vss
tl g g
980508EBA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe products described in this document are subject to foreign exchange and foreign trade laws.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1998-05-28 1/9
TOSHIBA TC75W55FU/FK
ELECTRICAL CHARACTERISTICS
DC CHARACTERISTICS (VDD = 3.0V, Vss = GND, Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Input Offset Voltage VIO 1 Rs--10kn - 2 10 mV
Input Offset Current 'IO - - - 1 - pA
Input Bias Current II - - - 1 - pA
Common Mode Input Voltage CMVIN 2 - 0.0 - 2.1 V
Voltage Gain (Open Loop) GV - - 60 70 - dB
. VOH 3 RL; 1M0 2.9 - -
Maximum Output Voltage VOL 4 RL21MQ - - 0.1 V
fo.mrt).on 'Pr/e Input Signal CMRR 2 V|N=0.0~2.1V 60 70 - dB
Rejection Ratio
Supply Voltage Rejection Ratio SVRR 1 1/DD=1.8--7.0V 60 70 - dB
Supply Current IDD 5 - - 20 40 pA
Source Current Isource 6 - 10 20 - ,uA
Sink Current Isink 7 - 100 450 - prA
DC CHARACTERISTICS (VDD = 1.8V, VSS = GND, Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Input Offset Voltage VIO 1 Rs=100kn - 2 10 mV
Input Offset Current ho - - - 1 - pA
Input Bias Current II - - - 1 - pA
Common Mode Input Voltage CMVIN 2 - 0.0 - 0.9 V
Voltage Gain (Open Loop) GV - - 60 70 - dB
. VOH 3 RLZ1MQ 1.7 - -
Maximum Output Voltage VOL 4 RLZ1MQ - - 0.1 V
Supply Current IDD 5 - - 16 32 pA
Source Current Isource 6 - 8 16 - PA
Sink Current Isink 7 - 100 400 - PA
AC CHARACTERISTICS (VDD = 3.0V, I/ss = GND, Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Slew Rate SR - - - 0.08 - V/pS
Unity Gain Cross Frequency fT - - - 160 - kHz
AC CHARACTERISTICS (VDD =1.8V, VSS = GND, Ta = 25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN TYP. MAX. UNIT
Slew Rate SR - - - 0.06 - V/ps
Unity Gain Cross Frequency fT - - - 140 - kHz
1998-05-28 2/9
TOSHIBA
TC75W55FU/FK
TEST CIRCUIT
1. SVRR, v.0
2. CMRR, CMVIN
3. VOH
VIM; "q
VDD: 1.8V : 1/DD=VDDI, VOUT=VOUT1
VDD=7.0V : VDD=VDD2, VOUT=VOUT2
- VOUT1 - VOUTZ Rs
SVRR - zoeog (l VDD1- VDD2 x RF + Rs
VDD Rs
VIC: (VOUT_ 2 >X RF+RS
VIN=0-0V : VIN=VIN1. VOUT=V0UT1
VIN=2-1V .' VIN=VIN2,VOUT=VOUT2
CMRR=20eog I/OUT-l-Vol? x Rs
1hN1-VIN2 RF+RS
le1= 3D -0.05V
lhN2-- 'Y +0.05V
1998-05-28 3/9
TOSHIBA
TC75W55FU/FK
4. VOL
le1= ED + o.csv
iT- VINZ = 't - 0.05v
VDD/Z/l
6. Isource 7. Isink
VDD VDD
1998-05-28 4/9
TOSHIBA TC75W55FU/FK
IDD - VDD GV - f
vss = GND
VIN = VDD / 2
A Ta = 25°C
ti. Ln
- T..?.
o 1 2 3 4 5 6 7 10 100 1k 10k 100k 1M 10M
SUPPLY VOLTAGE VDD (V) FREQUENCY f (Hz)
Isink - VDD VOL - Isink
vss = GND
Ta = 25°C
Ct" 800 S"
j,-', 600 >
ri), i'-:?
g 400 >
U) ti,
'ii. E
m 200 o
0 1 2 3 4 5 6 7 0 200 400 600 800
SUPPLY VOLTAGE VDD (V) SINK CURRENT Isink (PA)
VOL - Isink VOL - Isink
VDD = 5.0V
VDD=3-0V vss--GND
_ Vss=GND A Ta=25°C
ty Ta = 25''C it.
lr, ':
_ 1 F-
_.-.---
0 -..-----"
0 200 400 600 800 o 200 400 600 800
SINK CURRENT Isink (PA) SINK CURRENT kink (PA)
1998-05-28 5/9
TOSHIBA
'source (#A)
SOURCE CURRENT
OUTPUT VOLTAGE VOH (V)
OUTPUT VOLTAGE VOH (V)
Isource - VDD
vss = GND
Ta =25°C
0 1 2 3 4 5 6 7
SUPPLY VOLTAGE VDD (v)
VOH - Isource
3 VDD=3.0V
V55=GND
y Ta=25°C
0 4 8 12 16 20 24 28
SOURCE CURRENT Isource (PA)
VOH - RL
VDD=1.8V
V55=GND
Ta=25°C
10k 100k 1M 10M
LOAD RESISTANCE RL (Q)
OUTPUT VOLTAGE VOH (v) OUTPUT VOLTAGE VOH (v)
OUTPUT VOLTAGE VOH (V)
TC75W55FU/FK
VOH - Isou rce
VDD-- 1.8V
VSS = GND
Ta = 25°C
8 12 16 20 24 28
SOURCE CURRENT Isource (pA)
VOH - Isource
VDD-- 5.0V
vss = GND
Ta =25°C
0 4 8 12 16 20 24 28
SOURCE CURRENT Isource (PA)
VOH - RL
VDD=3.0V f"
vss--GND
Ta =25°C /
10k 100k 1M 10M
LOAD RESISTANCE RL (Q)
1998-05-28 6/9
TOSHIBA TC75W55FU/FK
VOH - RL PD - Ta
A 'i"t'" N,
I Q 200 N.
f? 6L N,
b' Q 's.
5 g N,
5 th 100
10k 100k 1M 10M -40 0 40 80 120
LOAD RESISTANCE RL (Q) AMBIENT TEMPERATURE Ta ('C)
1998-05-28 7/9
TOSHIBA TC75W55FU/FK
OUTLINE DRAWING
SSOP8-P-0.65 Unit : mm
3 ".5!
:5 + I
Ln cu.
tt? CD u
". n m
". a',,
o~0.1 :
Weight : 0.021g (Typ.)
1998-05-28 8/9
TOSHIBA TC75W55FU/FK
OUTLINE DRAWING
SSOP8-P-0.50A Unit : mm
S, cu.
c5 CD ‘E
an f,y
+1 J- ai
o." " "
o~0.1 :
Weight : 0.01g (Typ.)
1998-05-28 9/9
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