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TC58DVM82A1XBJ1 ,FlashFEATURESOrganization Memory cell allay 528 u 64K u 8 Register 528 u 8 Page size 528 bytes Block s ..
TC58DVM92A1FT ,FlashFEATURESOrganizationx Power supply V 2.7 V to 3.6 V CCMemory cell allay 528 u 128K u 8 Program/Er ..
TC58DVM92A1FT00 , MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVB160AFT-10 ,16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORYFEATURES • Power supply voltage • Block erase architecture 1 × 16 Kbytes / 2 × 8 Kbytes V = 2.7 V~3 ..
TC58FVB160AFT-70 ,16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORYTC58FVT160/B160AFT/AXB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2 ..
TC58FVB160AFT-70 ,16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORYfeatures commands for Read, Program and Erase operations to allow easy interfacing with microproces ..
TC962EPA , HIGH CURRENT CHARGE PUMP DC-TO-DC CONVERTER
TC9WMA1FK ,1,024-Bit (128 ?8 Bit) Serial E2PROMBlock Diagram Chip selectTiming Control Power supply CSV Power supply CCgenerator circuit (booster ..
TC9WMB1AFU ,Serial EEPROM (TC9WM series)Features 2• 2-wire serial interface (I C BUS) • Single power supply Read: V = 1.8 to 3.6 V CC Wri ..
TC9WMB1FK ,1024-Bit (128 ?8 Bit) 2-Wire Serial E2PROMFeatures 2 TM 2-wire serial interface (I C BUS ) (Note 1) Single power supply Read: V = 1.8 to ..
TC9WMB2AFK ,Serial EEPROM (TC9WM series)Block Diagram Address inputs A0 A1 A2Serial clock input SCL Timing Control Power supply V Power su ..
TC9WMB2FK ,2048-Bit (256 ?8 Bit) 2-Wire Serial E2PROMBlock Diagram Serial clock inputTiming Control Power supply SCLV Power supplyCCgenerator circuit ..
TC58DVM82A1XBJ1
Flash
TC58DVM82A1XBJ1
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
256-MBIT (32M u 8 BITS) CMOS NAND E2 PROM
DESCRIPTION The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory
(NAND E2 PROM) organized as 528 bytes u 32 pages u 2048 blocks. The device uses single power supply (2.7 V to 3.6 V for VCC ). The device has a 528-byte static register which allows program and read data to be transferred between
the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u 32 pages). The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output as
well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES Organization Memory cell allay 528 u 64K u 8
Register 528 u 8 Page size 528 bytes Block size (16K 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control Power supply Vcc: 2.7V to 3.6V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array to register 25 Ps max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ.
Erase (avg.) 10 mA typ. Standby 50 PA max. Package
P-TFBGA56-0710-0.80AZ (Weight: typ)
000707EBA1