TC58DVM72A1FT00 ,128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROMTC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INT ..
TC58DVM72F1FT00 ,128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROMapplications such as solid-state file storage, voice recording, image file memory for still cameras ..
TC58DVM82A1FT00 ,128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROMFEATURESOrganization TC58DxM72A1xxxx TC58DxM72F1xxxx Memory cell allay 528 u 32K u 8 264 x 32k x 1 ..
TC58DVM82A1XBJ1 ,FlashFEATURESOrganization Memory cell allay 528 u 64K u 8 Register 528 u 8 Page size 528 bytes Block s ..
TC58DVM92A1FT ,FlashFEATURESOrganizationx Power supply V 2.7 V to 3.6 V CCMemory cell allay 528 u 128K u 8 Program/Er ..
TC58DVM92A1FT00 , MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC94A29FAG ,Single-Chip CD Processor with Built-in Controller (CD-CX)features an LCD driver, 4-channel 6-bit AD converter, 1 port 2-channel 2/3-line or UART serial inte ..
TC94A29FAG ,Single-Chip CD Processor with Built-in Controller (CD-CX)Features Single-chip CD processor with on-chip CMOS LCD driver and 4-bit microcontroller Weight ..
TC962EPA , HIGH CURRENT CHARGE PUMP DC-TO-DC CONVERTER
TC9WMA1FK ,1,024-Bit (128 ?8 Bit) Serial E2PROMBlock Diagram Chip selectTiming Control Power supply CSV Power supply CCgenerator circuit (booster ..
TC9WMB1AFU ,Serial EEPROM (TC9WM series)Features 2• 2-wire serial interface (I C BUS) • Single power supply Read: V = 1.8 to 3.6 V CC Wri ..
TC9WMB1FK ,1024-Bit (128 ?8 Bit) 2-Wire Serial E2PROMFeatures 2 TM 2-wire serial interface (I C BUS ) (Note 1) Single power supply Read: V = 1.8 to ..
TC58DAM72A1FT00-TC58DAM72F1FT00-TC58DVM72A1FT00-TC58DVM72F1FT00-TC58DVM82A1FT00
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
128-MBIT (16M u 8 BITS/8M x 16BITS) CMOS NAND E2 PROM
DESCRIPTIONThe TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses
dual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ). The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes:
528 bytes u 32 pages/8k words + 256 words:264 words x 32 pages). The TC58DxM72x1xxxx is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES Organization TC58DxM72A1xxxx TC58DxM72F1xxxx Memory cell allay 528 u 32K u 8 264 x 32k x 16 Register 528 u 8 264 x 16
Page size 528 bytes 264 words Block size (16K 512) bytes (8k + 256) words Modes
Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control
Serial input/output Command control Power supply TC58DVM72x1xxxx TC58DAM72x1xxxx Vcc: 2.7V to 3.6V 2.7V to 3.6V Vccq: 2.7V to 3.6V 1.65V to 1.95V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array to register 25 Ps max
Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ.
Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 PA max. Package TSOP I 48-P-1220-0.50 (Weight:0.53g typ)
000707EBA1
