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TC57512AD-15
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 HORDSX 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY NENORY
DESCRI PTI ON
The TC57512AD is a 65,536 word x 8 bit CMOS ultraviolet light erasable and electrically
programmable read only memory. For read operation, the TC57512AD's access time ls
150ns/200ns, and the TC57512AD operates from a single S-volt power supply and has low
power standby mode which reduces the power dissipation without increasing access time.
The standby mode ls achieved by applying a TTL-high level signal to the 5E input.
Advanced CMOS technology reduces the maximum active current to 30mA/6.7MHz and standby
current to lOOuA. For program operation, the programming is achieved by using the high
speed programming mode. TC57512AD ls fabricated with the CMOS technology and the .
N-channel silicon double layer gate MOS technology. ci/rr.'', i
FEATURES
. Peripheral circuit: CMOS . Full static operation
Memory cell t N-NOS - High speed programming mode I, n
. Fast access time: . Inputs and outputs TTL compatible
TC57512AD-15 150ns Standard 28 pin DIP cerdip package
TC57512AD-20 200ns
. Low power dissipation BLOCK DIAGRAM
Active :' 30mA/6.7HHz m can PCC oo 01 oz 03 Ot 05 06 07
Standby: lOOuA
r-morris,!,,' ???????Y
PIN CONNECTION (TOP VIEW) I tig trg - OUTPUT BUFFERS
V CE CIRCUIT
A15 tC l 28 II VCC I '
A121: 2 27 3Al4 A0 o--, 6 COLIMN 64 COLUMN 1/0
A7C 3 26 35.13 A1 o-e ", nncomm - CIRCUIT
AGE 4 25 3A8 tf 3: I
ASC 5 24 3A9 A4 o-- E "
A4 I: 6 23 CIA11 A5 o-- n.
ASE? 22a6ii/vpr, 22:: t
A1: 9 20 ac? A9 o- "’ " DECODER , .
A10o-- g 65.536x8bna
A0 I: 10 19 07 All o--- G
00:11 18 06 A12 o- 3
OIC 12 17 nos th' g:
02!:13 16 304 Also-
GNDC 14 15 303
MODE SELECTION ' _
PIN NAMES PIN tTit- OTE/VPP Vcc oo~ o7 POWER
A0 ' A15 Address Inputs MODE (20) (22) (28) (11 'l, 13,15'o 19)
00'u07 Outputs (Inputs) Read I, L Data out A ti
CE Chip Enable Input Output Deselect * ll 5V High Impedance c ve
Output Program Standby ll * High Impedance Standby
0rf/vpr, Enable Supply Program L VPP mm Data In
Input Voltage Program Inhibit il VPP 2) High Impedance Active
VCC power Supply Program Verify L L 6;25V Data Out
Voltage CHN) R.. ll or L 1): HIGH SPEED PROGRAMMING MODE I
GND Ground 2 " HIGH SPEED PROGRAMMING MODE It
TC5751 2AD--1 5
TC5751 2AD-20
MAXIMUM RATI NGS
SYMBOL ITEM RATING UNIT
Vcc VCC Power Supply Voltage -0.6'u 7.0 V
VPP Program Supply Voltage -0.6 W 14.0 V
VIN Input Voltage -0.6 N 7.0 V
VI/O Input/Output Voltage -0. 6 'b Irarro. 5 V
PD Power Dissipation 1.5 w
TSOLDER Soldering Temperature . Time 260 . 10 °C-sec
TSTG Storage Temperature -65 R, 125 "c
TopR Operating Temperature -40 n, 85 °c
READ OPERATION
D.C. AND A.C. RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER TC57512AD-15/TC57512AD-20
Ta Op_erating Temperature -40 "I 85''C
Vcc VCC Power Supply Voltage 5veir,
D.C. AND OPERATING CHARACTERISTICS
SYMBOL PARAMET ER CONDITION MIN . TYP . MAX . UNIT
ILI Input Current VIN=0~ VCC - - $10 pA
IL0 Output Leakage Current 1roinr0-4'vvcc - - AIO pA
Icc01 CE-ov f-6.7MHz - - 30
ICCOZ Operating Current IOUT'OmA f-lMHz - - 15 mA
Iccs1 t52uvrrt - - 1 mA
ICCSZ Standby Current c-Eazircc-0.21r - - 100 "
VIH Input High Voltage - 2.2 - vccwa v
VIL Output Low Voltage - -.0.3 - 0.8 V
Von Output High Voltage Ioie-400vA 2.4 - - ll
VOL Output Low Voltage IOL-2.1mA - - 0.4 ll
IPP1 VPP Current hnie0'1pvctrr0.6 - - t10 pA
TC57512AD-15
TC57512AD--20
A.C. CHARACTERISTICS
TC57512AD-15 TC57512AD-20
SYMBOL PARAMETER TEST CONDITION UNIT
MIN. MAX. MIN. MAX.
tACC Address Access Time eTif=0BavrL - 150 - 200 ns
tCE t5if to Output Valid 6E=VIL - 150 - 200 ns
tOE 6T: to Output Valid CE=VIL - 70 - 70 ns
tum tTi? to Output In High-Z irEuvrr, o 60 o 60 ns
tDF2 5? to Output in Bigh-Z 5E=VIL 0 60 0 60 ns
tOH Output Data Hold Time tTir-Orr-r-vu, 0 - o - ns
A.C. TEST CONDITIONS
. Output Load 1 TTL Gate and CL=100pF
. Input Pulse Rise and Fall Times t lOns Max.
. Input Pulse Levels t 0.45Wu2.4v
. Timing Measurement Reference Level: Inputs 0.8V and 2.2V, Outputs 0.8V and 2.0V
CAPACITANCE *(Ta=25°C, f=lMHz)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
CINl Input Capacitanée VIN=0V - 4 6 pF
CINZ OX/VNS Input Capacitnace VIN=0V - 50 60 pF
COUT Output Capacitance VOUT=0V - 8 12 pF
* This parameter is periodically sampled and is not 1002 tested.
TIHING NAVEFORMS
t 32L!
a m CE //, Af
004,, HIGH Z mm. ourwrs F--'-"-'--''.
TC5 751 2AD--1 5
TC5751 2AD--20
[BIGH SPEED PROGRAM NtDiCl]
oc REc0l0iEN0E0 OPERATING CONDITIONS
SYMBOL PARAMETER WN. TYP. MAX. UNIT
VIH Input High Voltage 2.2 - Vcc+1.0 V
Ilu, Input Low Voltage -0.3 - 0.8 ll
Vcc Vcc Power' Supply Voltage 5.75 6.0 6.25 v
Vpp VPP Power Supply Voltage 12.0 12.5 13.0 ll
oc and OPERATING CHARACTERISTICS (Ta=25i5°c, vcc=6v:o.25v, Vpp=12.5Vi0.5V)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
ILI Input Current VIN=0navcc - - *10 "
hm Output High Voltage I0H=-400uA 2.4 - - ll
VOL Output Low Voltage I0L=2.lmA - - 0.4 ll
ICC VCC Supply Current - - - 30 mA
IPPZ VPP Supply Current VPP=13.OV - - 50 mA
AC PROGRAMMING CHARACTERISTICS (Ta---25:t5"C, 1lcc=61l-t0.25ll, Vpp=12.5V10.5V)
SYMBOL . PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
tAS Address Setup Time - 2 - - us
CAB Address Hold Time - 2 - - us
tOES GE/Vpp Setup Time - 2 - - us
toga EE/Vpp Hold Time - 2 - - us
tPRT 5f/Vpp Pulse Rise Time - 50 - - ns
tDS Data Setup Time - 2 - - us
erm Data Hold Time - 2 - - us
tVR TE/vm, Recovery Time - 2 - - us
tvcs VCC Setup Time - 2 - - us
tpw Initial Program Pulse Width CEEVIL, 5E7VPP=VPP 0.95 1.0 1.05 ms
tOPw Overprogram Pulse Width Note 1 2.85 3.0 78.75 ms
tDv Data Valid from CE 5E/Vpp=VIL - - 1 us
top trr: to Output in High-z 5E/Vpp=VIL - - 130 ns
M TEST CONDITIONS
. Output Load
. Input Pulse Rise and Fall Times
. Input Pulse Levels
. Timing Heasurement Reference Level'..
Note 1:
l TTT, Gate and CL (lOOpF)
lOns Max.
0.45V’vz.4V
Input 0.8V and 2.0V, Output 0.8V and 2.0V
The length of the overprogram pulse may vary as a function of the counter
value X.
TC5751 2AD-1 5
TC5751 2AD-20
[HIGH SPEED PROGRAM MODE li]
DC RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER MIN . TYP . MAX . UNIT
VIH Input High Voltage 2.2 - Vcc+1.0 V
VIL Input Low Voltage -0.3 - 0.8 ll
vCC VCC Power Supply Voltage 6.0 6.25 6.5 ll
Vpp Vpp Power Supply Voltage 12.5 12.75 13.0 V
DC and OPERATING CHARACTERISTICS (Ta=25t5''C, vcc-cx6.25W-0.25v, vitaa12.75v-+0.2511)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
ILI Input Current VIN=0~VCC - - 110 VA
vOH Output High Voltage loun-AOOuA 2.4 - - V
VOL Output Low Voltage I0L=2.1mA - - 0.4 V
ICC VCC Supply Current - - - 30 mA
TPP2 Vpp Supply Current vPP=13.ov - - 50 mA
AC PROGRAMMING CHARACTERISTICS (Ta=25:e5''c, VCC=6.25V10.25V, VPP=12.75Vt0.2SV)
SYMBOL i’ARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
CAS Address Setup Time - 2 - - us
tAH Address Hold Time - 2 - - us
tOES ore/he Setup Time - 2 - - US
toga GE/Vpp Hold Time - 2 - - us
tPRI 6E/VPP Pulse Rise Time - 50 - - ns
tDS Data Setup Time - 2 - - us
tDH Data Hold Time - 2 - - ps
tVR GEYVPP Recovery Time - 2 - - us
tvcs VCC Setup Time _ _ - 2 - - us
tpy Program Pulse Width CE=VIL, 0E/Vpp=Vpp 0.095 0.1 0.105 ms
tDV Data Valid from CE 0E/VPP=VIL - - 1 us
tDF (If to Output in High-Z trg/ve-vu, - - 130 ns
AC TEST CONDITIONS
. Output Load t 1 TTL Gate and CL (lOOpF)
. Input Pulse Rise and Fall Times t 10ns Max.
. Input Pulse Levels t 0.45V“IZ.AV
. Timing Measurement Reference Level: Input 0.8V and 2.0V, Output 0.8V and 2.0V
TC57512AD--15
TC5 751 2AD--20
TIMING WAVEFORMS (PROGRAM)
HIGH SPEED PROGRAMMING MODE I
HIGH SPEED PROGRAMMING MODE Ti
A0--AI 5
(VCC=6Vi0 . 25V, VPP=12 . 5Wc0 . 5V)
(VCC=6 . 25Vi0 . 25V, VPP=12 . 75Vi0 . 2511)
oivsu,
tAs tpw tvn tAH
- e-'--"""--'''--""""
\tOPW/ N, /
tPRT toss tom
o.-..,..--."
tDs trg, trw tDP
----------/ DIN STABLE F---- DOUT VALID
CC _/ tvcs
Note 1.
PROGRAM
PROGRAM VERI FY
VCC must be applied simultaneously or before VPP and cut off
simultaneously or after Vpp.
Removing the device from socket and setting the device in socket with
1lPP=12.5ur0.511 or Vpp=12.7510.25v may cause permanent damage to the
device.
The Vpp supply voltage is permitted up to 14V for program operation.
So the voltage over 14V should not be applied to the VPP terminal.
When the switching pulse voltage ls applied to the Vpp terminal, the
overshoot voltage of its pulse should not he exceeded 1411.
TC57512AD-15
TC57512AD-20
[ERASURE CHARACTERISTICS]
The TC57512AD's erasure is achieved by applying shortwave ultraviolet light which has
a wavelength of 25371 (Angstroms) to the chip through the transparent window. The
integrated dose (ultraviolet light intensity [wlcmz] x exposure time (see.)) for
erasure should be a minimum of 15 [w-sec/cmz]. When the Toshiba sterilizing lamp
GL-15 is used and the device ls exposed at a distance of 1cm from the lamp surface,
the erasure will be achieved within 60 minutes. And using commercial lamps whose
ultraviolet light intensity ls a 12000 [pw/cmz] will reduce the exposure time to about
20 minutes. (In this case, the Integrated does is 12000 [pw/cmZJX (20x 60) [sec]§ 15
[w-sec/cm21r) The TC57512AD's erasure begins to occur when exposed to light with
wavelength shorter than 40001. The sunlight and the fluorescent lamps will include
3oarutroo01 wavelength components. Therefore when used under such lighting for ex-
tended periods of time, the opaque seals-Toshiba EPRON Protect Seal AC901-are available.
[QPERATION INFORMATION]
The TC57512AD's six operation modes are listed in the following table.
Node selection can be achieved by applying TTL level signal to all Inputs.
Program Operation 12.5V 6V
PIN NAMES (NUMBER) CE " Vpp Vcc 00'u07 POWER
MODE (20) (22) (l) (28) (ll'b13, 15'u19)
Read L L Data Out
Read Operation Output Deselect * ll 511 SV High Impedance Active
(Ta-s-ti," C) Standby * High Impedance Standby
Program ll ) I) Data In
Program Inhibit High Impedance Active
I, 12.75v2> 6.25V Data Out
36311":
= + I'
(Ta 25-5 C) Program Verify
1); HIGH SPEED PROGRAM MODE I
2); HIGH SPEED PROGRAM MODE II
Note: ll; VIHU L; VIL, *; VIH or VIL,
READ MODE
The TCS7512AD has two control functions. The chip enable (5?) controls the operation
power and should he used for device selection. The output enable (0E) control the
output buffers, independent of device selection. Assuming that EEE0§=VIL, the output
data is valid at the outputs after address access time from stabilizing of all ad-
dresses. The CE'to output valid (tCE) is equal to the address access time (tACC).
Assuming that EE=VIL and all addresses are valid, the output data is valid at the
outputs after tOE from the falling edge of trE.
TC5751 2AD-1 5
TC5751 2AD--20
[DUTPUT DESELECT MODE!
Assuming that CE=VIH or 5E=VIH, the outputs will be In a high impedance state. So two
or more T057512AD’S can be connected together on a common bus line. When a is decoded
for device selection, all deselected devices are in low power standby mode.
STANDBY MODE
The TC57512AD has a low power standby mode controlled by the CE signal. By applying
a high level to the tTIT Input, the TCS7512AD ls placed in the standby mode which re-
duce the operating current to 100PA by applying MOS-high level (VCC) and then the
outputs are in a high impedance state, independent of the 6% Inputs.
PROGRAM MODE
Initially, when received by customers, all bits of the TC57512AD are in the "1" state
which is erased state. Therefore the program operation is to introduce "0's" data
into the desired bit locations by electrically programming. The TCS7512AD is In the
programming mode when the GEYVPP Input ls at 12.5V or 12.75V and CE is at TTL-Low
level. The TC57512AD can be programmed any location at any time either individually,
sequentially, or at random.
PROGRAM VERIFY MODE
The verify mode Is to check that desired data is correctly programmed on the pro-
grammed bits. The verify ls accomplished with GE/Vpp at VIL and trg' at VIL.
[PROGRAM INHIBIT MODE]
Under the condition that the program voltage (+12.5V or +12.75V) is applied to Vpp
terminal, a high level 5E Input inhibits the TC57512AD from being programmed.
Programming of two or more TC57512AD's in parallel with different data is easily ac-
complished. That ls, all Inputs except for 5? may be commonly connected, and a TTL
low level program pulse is applied to the Ci of the desired device only and TTL high
level signal is applied to the other devices.
TC5751 2AD--1 5
TC5751 2AD-20
H-IIGH SPEED PROGRAM MODE II
This high speed programming mode I is performed at Vcc=6.0v and GE/Vpp=12.5V.
The programming is achieved by applying a single TTL low level lms pulse to the Tit-
input after addresses and data are stable. Then the programmed data is verified by
using Program Verify Mode.
If the programmed data is not correct, another program pulse of lms ls applied and
then the programmed data is verified. This should be repeated until the program
operates correctly (max. 25 times).
After correctly programming the selected address, the additional program pulse with
pulse width 3 times that needed for initial programming is applied.
Wen programming has been completed, the data in all addresses should be verified
with vcc=5v.
IHIGH SPEED PROGRAM N0isiiil
The program time can be greatly decreased by using this high speed programming mode
Ir. This high speed programming mode I is performed at Vcc=6.25v and 5E/Vpp=12.75V.
The programming ls achieved by applying a single TTL low level 0.1ms pulse to the 5?
input after addresses and data are stable. Then the programmed data is verified by
using Program Verify Mode.
If the programmed data is not correct, another program pulse of 0.1ms is applied and
then the programmed data is verified. This should be repeated until the program
operates correctly (max. 25 times).
When programming has been completed, the data in all addresses should be verified
vt th VCC=5V .
TC5 751 2AD--1 5
TC5 751 2AD--20
HIGH SPEED PROGRAM MODE l]
FLOW CHART
Vcc = 6.0i025V
Vpp = [2510.5 V
ADDRESS
= START ADDRESS
DATA= FF ?
PROGRAM.' TPW lms
aai'iilr/i?ii--Y-!-it
READ.' (NE BYTE
ADDRESS OVERPROGRAM 3X PULSES OF Imsee
=NEXT ADDRESS OR ONE PULSE OF 3X msec DURATION
READ.' ONE BYTE
Veg: 5.0 hr
LL BYTE
TC5751 2AD--1 5
TC5751 2AD--20
[HIGH SPEED PROGRAM MODE fl
FLOW CHART
VCC LT". 6.25d: 0.25 v
vpp = 12.75 i025 v
ADDRESS
= START ADDRESS
ADDRESS
=NEXT ADDRESS
TC5751 2AD--1 5
TC5751 2AD-20
[irLECTR1t: SIGNATURE MODE]
Electric signature mode allows to read out a code from TC57512AD which identifies
its manufacturer and device type.
The programming equipment may reads out: manufacturer code and device code from
TC57512AD by using this mode before program operation and automatically set program
voltage (VPP) and algorithm.
Electric Signature mode ls set up when 12V Is applied to address line A9 and the
rest of address lines is set to VIL in read operation. Data output in this con-
ditions is manufacturer code. Device code is identified when address A0 Is set to
VIH. These two codes possess an odd parity with the parity bit of MSB (07).
The following table shows electric signature of TCS7512AD.
PINS A0 07 O6 05 04 03 02 01 00 HEX.
SIGNATURE (10) (19) (18) (17) (16) (15) (13) (12) (11) DATA
Manufacture Code VIL 1 0 0 1 1 0 0 0 98
Device Code VII! 1 0 0 0 0 1 0 1 85
Notes: A9=12VtO.5V
AlWAS, A10NA15, tTIT, UFVIL
TC5751 2AD-1 5
TC5751 2AD-20
OUTLINE DRAWINGS
WDIP28-G-600
Unit l mm
28 15 . . ... -
f-"Sf""trTnr-tr"tr-'tetr-tr"'tr""tr"Srie"tet _ I
, ' f o
'H e'.
L"'a'u-'"-au"""'"'"H"a''a""'"-'"' If "
98.9TYP T 0.1
o.2sttls
= 36.83105 7 u!
_ _ _ - '". F" 2' F
I I Q, In.
Ef A 3
i e 5 ---i'i -..=.t,.,. N
. s"; .'re 0.46:0.1 .
t't.'r=.s'.k - ------- Ct
IEl 2 iiEEEl
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