TC55V8512FTI-12 ,524,288-WORD BY 16-BIT CMOS STATIC RAMTC55V8512JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8 ..
TC55V8512FTI-15 ,524,288-WORD BY 16-BIT CMOS STATIC RAMapplications where high-speed access and high-speed storage are required. All inputs and outputs ar ..
TC55V8512J-12 ,524,288-WORD BY 8-BIT CMOS STATIC RAMTC55V8512J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-B ..
TC55V8512J-15 ,524,288-WORD BY 8-BIT CMOS STATIC RAMTC55V8512J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-B ..
TC55V8512J-15 ,524,288-WORD BY 8-BIT CMOS STATIC RAMFEATURES • Single power supply voltage of 3.3 V ± 0.3 V • Fast access time (the following are maxim ..
TC55V8512JI-12 ,524,288-WORD BY 16-BIT CMOS STATIC RAMTC55V8512JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8 ..
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TC55V8512FTI-12-TC55V8512FTI-15-TC55V8512JI-12-TC55V8512JI-15
524,288-WORD BY 16-BIT CMOS STATIC RAM
TC55V8512JI/FTI-12,-15 Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Package:
SOJ36-P-400-1.27 (JI) (Weight: 1.35 g typ)
TSOP II44-P-400-0.80 (FTI) (Weight: 0.45 g typ) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT CMOS STATIC RAM
DESCRIPTION The TC55V8512JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288
words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it
operates from a single 3.3 V power supply. Chip enable (CE ) can be used to place the device in a low-power mode,
and output enable ( OE ) provides fast memory access. This device is well suited to cache memory applications
where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL
compatible. The TC55V8512JI/FTI is available in plastic 36-pin SOJ and 44-pin TSOP with 400mil width for high
density surface assembly. The TC55V8512JI/FTI guarantees −40° to 85°C operating temperature so it is suitable
for use in wide operating temperature system.
FEATURES Fast access time (the following are maximum values)
TC55V8512JI/FTI-12:12 ns
TC55V8512JI/FTI-15:15 ns Low-power dissipation
(the following are maximum values)
Standby:10 mA (both devices)
PIN ASSIGNMENT (TOP VIEW) PIN NAMES 36 PIN SOJ 44 PIN TSOP
A17
I/O1
I/O2
VDD
GND
I/O3
I/O4
A16
A15
A14
A13
A18
NC
A4
A5
A6
A7
I/O8
I/O7
GND
VDD
I/O6
I/O5
A8
A9
A10
A11
A12
NU
18 19 OE
A17
I/O1
I/O2
VDD
GND
I/O3
I/O4
A16
A15
A14
A13
A18
NC
NC
NC
A4
A5
A6
A7
I/O8
I/O7
GND
VDD
I/O6
I/O5
A8
A9
A10
A11
A12
NU
NC
NC CE