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TC55V4000ST-70-TC55V4000ST-85
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55V4000ST-70,-85 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT STATIC RAM
DESCRIPTION The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V
power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3
mA/MHz and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 0.5 µA standby
current (at VDD = 3 V, Ta = 25°C) when chip enable (CE) is asserted high. There are two control inputs. CE is
used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. This
device is well suited to various microprocessor system applications where high speed, low power and battery
backup are required. The TC55V4000ST is available in a normal pinout plastic 32-pin thin-small-outline package
(TSOP).
FEATURES Low-power dissipation
Operating: 10.8 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features usingCE Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Standby Current (maximum):
PIN ASSIGNMENT (TOP VIEW) 32 PIN TSOP
PIN NAMES Access Times (maximum): Package:
TSOPⅠ32-P-0.50 (ST) (Weight: 0.24 g typ)
(Normal pinout)
