TC554001AFI70L ,524,288-WORD BY 8-BIT STATIC RAMFEATURES • Access Times (maximum): • Low-power dissipation Operating: 55 mW/MHz (typical) TC554001A ..
TC554001AFI-70L ,524,288-WORD BY 8-BIT STATIC RAMfeatures using CE . -70,-70L -85,-85L -10,-10L • Data retention supply voltage of 2.0 to 5.5 V Acce ..
TC554001AFI-70L ,524,288-WORD BY 8-BIT STATIC RAMapplications where high speed, low power and battery backup are required. And, with a guaranteed op ..
TC554001AFI-70L ,524,288-WORD BY 8-BIT STATIC RAMFEATURES • Access Times (maximum): • Low-power dissipation Operating: 55 mW/MHz (typical) TC554001A ..
TC554001AFI-85L ,524,288-WORD BY 8-BIT STATIC RAMTC554001AFI/AFTI/ATRI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GAT ..
TC554001AFI-85L ,524,288-WORD BY 8-BIT STATIC RAMapplications where high speed, low power and battery backup are required. And, with a guaranteed op ..
TC9235F ,ELECTRONIC VOLUMEFEATURES M M ll llo Attenuation can be controlled from OdB to -78dB by up,IUdown input.hID1 (LD_‘Jn ..
TC9235P ,ELECTRONIC VOLUMETC9235P/FT(‘QTJIEP T(‘QTJIEFELECTRONIC VOLUM EThe TC9235P and TC9235P are an optimum CMOS IC TC9235 ..
TC9237BF ,SUMM-DELTA MODULATION SYSTEM DA CONVERTER WITH BUILT-IN DIGITAL FILTERTC9237BF/BNT(‘Q727RF T(‘Q727RN2-A MODULATION SYSTEM DA CONVERTER WITH BUILT-IN DIGITALTC9237BF, TC9 ..
TC9237BF ,SUMM-DELTA MODULATION SYSTEM DA CONVERTER WITH BUILT-IN DIGITAL FILTERTC9237BF/BNT(‘Q727RF T(‘Q727RN2-A MODULATION SYSTEM DA CONVERTER WITH BUILT-IN DIGITALTC9237BF, TC9 ..
TC9237BN ,SUMM-DELTA MODULATION SYSTEM DA CONVERTER WITH BUILT-IN DIGITAL FILTERTC9237BF/BNT(‘Q727RF T(‘Q727RN2-A MODULATION SYSTEM DA CONVERTER WITH BUILT-IN DIGITALTC9237BF, TC9 ..
TC9240 ,AUDIO LCD DRIVER ICTC924OFT(‘Q7anThe TC924OF is a driver IC designed for exclusive use foroutput expansion LCD which i ..
TC554001AFI-10L-TC554001AFI70L-TC554001AFI-70L-TC554001AFI-85L-TC554001AFTI-70L-TC554001AFTI85L-TC554001AFTI-85L
524,288-WORD BY 8-BIT STATIC RAM
TC554001AFI/AFTI/ATRI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT STATIC RAM
DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory (SRAM) organized as 524,288
words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a
single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating
current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2
µA standby current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to
select the device and for data retention control, and output enable ( OE ) provides fast memory access. This device is
well suited to various microprocessor system applications where high speed, low power and battery backup are
required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the
TC554001AFI/AFTI/ATRI can be used in environments exhibiting extreme temperature conditions. The
TC554001AFI/AFTI/ATRI is available in a standard plastic 32-pin small-outline package (SOP) and normal and
reverse pinout plastic 32-pin thin-small-outline package (TSOP).
FEATURES Low-power dissipation
Operating: 55 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE. Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of −40° to 85°C Standby Current (maximum):
PIN ASSIGNMENT (TOP VIEW) PIN NAMES 32 PIN SOP & TSOP 32 PIN TSOP
VDD
A15
A17
R/W
A13
A8
A9
A11
A10
I/O8
I/O7
I/O6
I/O5
I/O4
A18
A16
A14
A12
I/O1
I/O2
I/O3
GND
(AFI/AFTI)
VDD
A15
A17
R/W
A13
A11
A10
I/O8
I/O7
I/O6
I/O5
I/O4
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
(ATRI)
