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Partno	Mfg	Dc	Qty	Available	Descript
TC551001BFL70L	TOSHIBA	N/a	6100	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-70L |TC551001BFL70L	TOSHIBA	N/a	16000	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-70L |TC551001BFL70L	TOSH	N/a	795	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-70L |TC551001BFL70L	TOS	N/a	33	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-70L |TC551001BFL70L		N/a	17	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL85L	TOSHIBA	N/a	400	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-85L |TC551001BFL85L	TOSHIBA	N/a	5704	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-85L |TC551001BFL85L	TOS	N/a	150	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFL-85L |TC551001BFL85L	TOSHIBA ?	N/a	31	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFTL-70L |TC551001BFTL70L	TOSH	N/a	142	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFTL-70L |TC551001BFTL70L	TOSHIBA	N/a	8000	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BFTL-85L |TC551001BFTL85L	TOSHIBA	N/a	3596	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BPL-70L |TC551001BPL70L	TOSH	N/a	200	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TC551001BPL-85L |TC551001BPL85L	TOSHIBA	N/a	6100	avai	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

TC551001BFL-70L ,SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM TOSHIBATC551001BPL/BFL/BFTL/BTRL-70L/ ..
TC551001BFL-70L ,SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAMfeatures with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is ..
TC551001BFL-70L ,SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM TOSHIBATC551001BPL/BFL/BFTL/BTRL-70L/ ..
TC551001BFL-70L ,SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAMFeatures• Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at Ta = 25

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TC551001BFL70L-TC551001BFL-70L-TC551001BFL85L-TC551001BFL-85L-TC551001BFTL-70L-TC551001BFTL-85L-TC551001BPL-70L-TC551001BPL-85L
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TOSHIBA
Features Low power dissipation
27.5mW/MHz (typ.) Standby current: 4
A (max.) at Ta = 25 5V single power supply Access time (max.) Power down feature: CE1, CE2 Data retention supply voltage: 2.0 ~ 5.5V Inputs and outputs directly TTL compatible Package TC551001BPL : DIP32-P-600
TC551001BFL : SOP32-P-525
TC551001BFTL : TSOP32-P-0820
TC551001BTRL : TSOP32-P-0820A
Pin Connection (Top View)
SILICON GATE CMOS
131,072 WORD x 8 BIT STATIC RAM
Description
The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,
and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an
operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is
placed in a low power standby mode in which the standby current is 2
A typically. The TC551001BPL has three control inputs.
Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast
memory access. The TC551001BPL is suitable for use in microprocessor application systems where high speed, low power, and
battery backup are required.
The TC551001BPL is offered in a standard dual-in-line 32-pin plastic package, a small outline plastic package, and a thin small
outline plastic package (forward, reverse type).
Pin Names

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