TC54256AP ,32768 word x 8-bit CMOC one time programmable read only memory, 200ns32,768 WORD M 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY
DESCRIPTION
The TCS4256AP/AF ..
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TC54256AF-TC54256AP
32768 word x 8-bit CMOC one time programmable read only memory, 200ns
32,768 WORD X 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY
DESCRIPTION
The TCS4256AP/AF is a 32,768 wordx 8 bit one time programmable read only memory,
and molded in a 28 pin plastic package. The TC5li256AP/AF's access time is 20thts and
has law power standby mode which reduces the power dissipation without increasing
access time. The electrical characteristics and programing method are the same as
U.V. EPROM TC57'256AD's. Once programmed, the TC34ati6AP/A2i' cannot be erased because of using
plastic DIP without transparent window.
FEATURES
. Peripheral circuit: CMOS . Inputs and outputs TTL compatible
Memory cell t N-1f0S . Pin compatible with RON TC53257P, M23256P,
. Low power dissipation EPROM Ttftf272560/AD, TC57256D/AD, One time PROM
Active t 30mA/6.7NRz TMN24256P/AP and TC54256P
Standby: lOOpA . Standard 28 pin DIP plastic package: TC54256AP
. Fast access time: 200ns . Plastic Flat Package t TC54256AF
. Single 5V power supply
. Full static operation
. High speed programming mode BLOCK DIAGRAM
PIN CONNECTION (TOP vxaw) v? T 't tll oi"i' tf' 'i' I'
vadl V zeavcc JIto- ZSEand GE
Alt) C 2 273A1¢ ego-- CIRCUIT - OUTPUT BUFFERS
A7C3 263A13 I
A6E4. 253A8 Aoo- [ f
asqs " DA9 tylc , COLUMN " comma I/O
MEG 233A11 Mo- E DECODER r CIRCUIT
A3C7 22 DUE Ato- h
112:3 21:A10 tit: g '
Al C 9 203611.r o- trt
A0C1o 19 :07 230- 'i' _,a9 now 3,;2 "ttLP'''
00 t: 11 18 Clots Ai't'ltrd g DEGODER 52,768x801ta
01 C 12 I'? :05 A11 o-- n
02 E 13 16 :04. ta1is"la'" <
GND C " 15 Dos Also--
PIN NAMES MODE SELECTION
AONAlb Address Inputs PIN CE OE VPP VCC 00'V07 POWER
00m07 Outputs (Inputs) MODE (20) (22) (l) (28) (11'u13,15'v19)
5: Chip Enable Input :ead D i L Data Out Active
OE Output Enable Input u put eselect H SV SV High Impedance
Standby il * High Impedance Standby
ll Program Supply
PP Voltage Program L B Data In
V Supply Voltage Program Inhibit ll ll 12.5V 6V High Impedance Active
VCC CC
(+5V) Program Verify * L Data Out
GND Ground *: ll or L
TC54256AP/AF
HAXIMUM RATINGS
SYMBOL ITEM RATING UNIT
VCC VCC Power Supply Voltage -0.6N7.0 V
Vpp Program Supply Voltage -0.6ru14.0 ll
VIN Input Voltage -0.6n:7.0 ll
VI/O 1npue/0ut:pye Voltage -O.6v»VCC+O.5 ll
Pp Power Dissipation 1.5 il
TSOLDER Soldering Temperature Time 260 .10 °C- sec
TSTRG Storage Temperature -65ru125 ''C
TOPR Operating Temperature ~40'v85 ''C
READ OPERATION
D.C. RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER MIN . TYP . MAX . UNIT
VIH Input High Voltage 2.2 - VCC+0.3
VIL Input Low Voltage _-0.3 -. 0.8
VCC VCC Power Supply Voltage 4.75 5.00 5.25 ll
VPP Vpp Power Supply Voltage Vcc-0.6 VCC Vcc+0.6
D.C. and OPERATING CHARACTERISTICS (Ta=-40'h85°C, VCCBSViSZ)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
ILI Input Current VIN=0VINVCC - - 110 "
ICCOl F<.7tge - - 30
ICCOZ Operating Current Cg---op f=1MHz - - 10 mA
Icc31 E=VIH - - 1 mA
Iccsz Standby Current Ctuvcc-0.2v - - 100 uA
Von Output High Voltage IOH=~400pA 2.1. - - ll
Vol, Output: Low Voltage IOL=2.1mA - - 0.4 v
Ippl Vpp Current Vpp=VcctO.6V - - :10 "
1L0 Output Leakage Current 1loura'0"v'uvcc - - t10 pA
TC54256AP/AF
A.C. CHARACTERISTICS (Ta----h0'u85''C, vcc=5V:SZ. VPP=Vcci0~6V)
SYMBOL PARAMETER TEST CONDITION MIN. MAX. UNIT
tACC Address Access Time CEEGEEVIL - 200
tCE Cf to Output Valid 6E=VIL - 200
tOE -0E to Output Valid EEVIL - 70
tnm tFE- to Output: in High-Z bi=vIL o 60 ns
tDF2 ar to Output: in High-Z C_E=VIL o 60
ton Output Data in Hold Time C_=5E=VIL O -
A.C. TEST CONDITIONS
. Output Load t l TTL Gare and CL=100pF
. Input Pulse Rise and Fall Times t lOns Max.
. Input: Pulse Levels ' 0.45V'VZ.4V
. Timing Measurement Reference Level t Inputs 0.8V and 2.2V, Outputs 0.8V and 2.0V
CAPACITANCE * (Ta=25°C, f=lMHz)
SYMBOL - PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
CIN Input Capacitance) VIN=OV - 4 6 F
cOUT Output Capacitance VOUT=0V - 8 12 p
* This parameter is periodically sampled and is not 1002 tested.
TIMING HAVEFORMS (READ)
AO~514 x (YC,
is.?,' \m’ / //
tnFl l
tOE ifij
6'g , §\\\§\\\L _/'ft,t)
N t / /
TACO TDF2
L' av:
oo-o7 P.10.v, Z DATA OUTPUTS (EH-I-cr-i-i--'-'-----
TC54256AP/AF
PROGRAM OPERATION
D.C. RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VIH Input High Voltage 2.2 - VCC+1'0
VII, Input Low Voltage -O.3 - 0.8
Vcc _ Vcc Power Supply Voltage 5.75 6.0 6.25 ll
VPP VPP Power Supply Voltage 12.0 12.5 13.0
D.C. and OPERATING CHARACTERISTICS (Tam25s.5''C, Vcc=6V:0.25V, Irst=12.5v.i0.5v)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
ILI Input: Current VIN=0NVCC - - " *10 "
VOH Output High Voltage 1tm=-40thiA 2.4 - - V
VOL Output Low Voltage IOL=2.lmA - - 0.4 ll
ICC VCC Supply Current - - - 40 mA
Ippz VPP Supply Current VPP=13.OV - - 50 mA
VID A9 Auto Select Voltage - 11.5 12.0 12.5 v
A.C. PROGRAMMING CHARACTERISTICS (Ta=25t5°C, VCC=6ViO-25V: vPP=12.5vur0.51r)
SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT
tAS Address Setup Time - 2 ... - us
tAH Address Hold Time - 2 - - us
tCEs CE Setup Time - o - - ns
tcsu CIT Hold Time - o - - ns
tOES tE' Setup Time - 2 - - us
tDS Data Setup Time - 2 - - us
tam Data Hold Time - 2 - - us
tvps VPP Setup Time - 2 - - us
tvcs VCC Setup Time - 2 - - us
cPw Initial Program Pulse Width CEEVIL, GEEVIH 0.95 l 1.05 ms
tOPw Overprogram Pulse Width Note 1 2.85 3 78.75 ms
tOE 5? to Output Valid EEEVIH - - 150 ns
tDFP 6E to Output in High-Z EEéVIH - - 130 ns
A.C. TEST CONDITIONS
. Output Load
. Input Pulse Rise and Fall Times
. Input Pulse Levels
. Timing Measurement Reference Level t
Note 1:
' 1 TTL Gate and CL (lOOpF)
t 10ns Max.
t 0.45V'M2.4V
Input 0.8V and 2.2V, Output 0.8V and 2.0V
The length of the overprogram pulse may vary as a function of the counter
value X.
TC54256AP/AF
TIMI M? NAVEFORMS (PROGRAM)
(VCC=6ViO . 25V , VPP=12 . 5V10 . 5V)
AO-lt JI S,
tAs TPi7 tAH
" l tow tcm
Rugs tDFP
OE \ /
CDS tDH ton
oo~ov ----------4 DIN STABLE F---------) DOUT VALID F-----
‘_______1
vCC / tvcs PROGRAM PROGRAM VERIFY
Note 1. VCC must be applied simultaneously or before Vpp and cut off
simultaneously or after Irre.
2. Removing the device from socket and setting the device in socket
with VPP=12.5V may cause permanent damage to the device.
3. The VPP supply voltage ls permitted up to 14V for program operation.
So the voltage over bill should not be applied to the Vpp terminal.
When the switching pulse voltage is applied to the VPP terminal, the
overshoot voltage of its pulse should not be exceeded 14V.
TC54256AP/AF
(OPERATION INFORMATION]
The TC54256AP/AF's six operation modes are listed in the following table.
Node selection can be achieved by applying TTL level signal to all Inputs.
PIN NAMES (NUMBER) CE " VPP VCC 00s07 POWER
MODE (20) (22) (l) (28) (11s13, Iru19)
Read L L Data Out
Read Operation * Active
(Ta---uii''C) Output Deselect ll SV SV High Impedance
Standby H * High Impedance Standby
. Program L ll Data In
Program Operation
(Ta=25i5°C) Program Inhibit il ll 12.5V 6V High Impedance Active
Program Verify * L Data Out
Note: H; VIH’ L; VIL’ *; VIH or Vii,
READ MODH
The TC54256AP/AF has two control functions. The chip enable (5E) controls the
operation power and should be used fog device selection.
The output enable (OTe) controls the output buffers, Independent of device selection.
Assuming that tTtu0D=vr1., the output data is valid at the outputs after address
access time from stabilizing of all addresses.
The E? to outng valid (tCE) ls equal to the address access time (tACC).
Assuming that CE=VIL and all addresses are Eglid, the output data is valid at the
outputs after tOE from the falling edge of OE.
[6UTPUT DESELECT MODE]
Assuming that 5E=VIH or 5§=VIH, the outputs will be in a high impedance state.
So two or more TC54256AP/AF's can be connected together on a common bus line.
When CE is decoded for device selection, all deselected devices are in low power
standby mode.
STANDBY MODE
The TC54256AP/AF has a low power standby mode controlled by the CE signal.
By applying a high level to the 5: Input, the TC54256AP/AF ls placed in the standby
mode which reduce the operating current to lOOuA by applying MOS-high level (VCC)
and then the outputs are in a high Impedance state, independent of the trg inputs.
TCS4256AP/AF
PROGRAM MODE
Initially, when received by customers, all bits of the TC54256AP/AF are in
the "1" state which is erased state.
Therefore the program operation is to introduce "0's" data into the desired bit
locations by electrically programming.
The TC54256AP/AF is in the programming mode when the Vpp input ls at 12.5V and E? is
at TTL-how level under tifr-vw.
The TC54256AP/AF can be programmed any location at anytime either individually,
sequentially, or at random.
PROGRAM VERIFY MODE
The verify mode is to check that desired data is correctly programmed on the
programmed bits. - -
The verify is accomplished with OE at VIL and CE at VIE or VIL-
PROGRAM INHIBIT MODE
Under the condition that the program voltage (+12.5V) is applied to Vpp
terminal, a TTL high level ct- input inhibits the TC54256AP/AF from being programmed.
Programming of two or more TC54256AP/AF's in parallel with different data is easily
accomplished. That is, all inputs except for tTtl and 5? may be commonly connected,
and a TTL Lov-level program pulse is applied to the C? of the desired device only
and TTL high level signal ls applied to the other devices.
HIGH SPEED PROGRAMMING MODE
The program time can be greatly decreased by using this high speed programming
mode. The device is set up in the high speed programming mode when the programming
voltage (+12.5V) is applied to the Vpp terminal with l/ctr-till.
The programming is achieved by applying a single TTL low level lms pulse to the 5E
input after addresses and data are stable. Then the programmed data is verified by
using Program Verify Node.
If the programmed data is not correct, another program pulse of lms is applied and
then the programmed data is verified. This should be repeated until the program
operates correctly (max. 25 times).
After correctly programming the selected address, the additional program pulse with
width of 3 times more than that needed for initial programming is applied.
When programming has been completed, the data in all addresses should be verified
with VCC=VPP=SV.
TC54256AP/AF
HIGH SPEED PROGRAM MODE FLOW CHART
ADDRESS -
S TART ADDRES S
Vac - 6V
Vpp - 1 2.5V
DATA "m?'?
PROGRAM lms PULSE
ADDRES
NEXT A
DDHESS
OVERPROORAM " PULSES OF lmsec
on ONE PULSE tN? 3X maec DURATION
TC54256AP/AF
ELECTRIC SIGNATURE MODE
Electric signature mode allows to
identifies its manufacturer and device
The programming equipment may read out
TC54256AP/AF by using this mode before
program voltage (VPP) and algorithm.
Electric Signature mode ls set up when
rest of address lines is set: to VII, in
condition is manufacturer code. Devi
read out: a code from T054256AP/AF which
manufacturer code and device code from
program operation and automatically set
12V ls applied to address line A9 and the
read operation. Data output in this
ce code is identified when address A0 is
set to Vila. These two codes possess an odd parity with the parity bit of MSB
(07). The following table shows electric signature of T054256AP/AF.
PINS A0 07 06 OS 04 03 02 Ol 00 HEX.
SIGNATURE (10) (l9) (18) (17) (16) (15) (13) (12) (11) DATA
Manufacture Code Vii, 1 0
O 1 1 0 0 0 98
Device Code VIH 1 1
O 0 O l 0 0 Ch
Notes: A9=12Vi0.5V
Al'uA8, A10NA14, E, OE=VIL
TC54256AP/AF
OUTLINE DRAWINGS
DIP28-P-600
Unit:mm
28 15 l l
-CCnCmr"'""Tr'-Tr-nrtr"-1t-1t-nr-Tr"CCLr-tr'-1r"O, "d l Ct
L-lt-Ju-gi-UL-gl-ICJ/IL-IL-Ji,...;; -
37.0 t 0.2
th25 tons
3.5 10.3
0.5lMIN
1.99TYP
Note: Package width and length do not include mold protrusion,
allowable mold protrusion is 0.15mm.
TC54256AP/AF
OUTLINE DRAWINGS
SOP28-P-450
Unit l mm
"e------------- 18.5 t0.2 --------+
EHHHHHHHHHHHHH it
8.8i0.2
11 8:0 3
(450mil)
_iiijjiji.irljljWj,ljjljrli..-.....-...
l I 14
1.0TYP 0.43 t 0.1
A 00.1
c, th15 -o.os
I ILOiOJ
Note: Package width and length do not include mold protrusion,
allowable mold protrusion is 0.15mm.
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