TC51WHM516AXBN70 ,2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAMBLOCK DIAGRAM CEA9 A10 V DDA11 GNDA12 A13MEMORY CELL ARRAY A14A154,096 × 512 × 16 A16(33,554,432) A ..
TC528128BJ-10 ,100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAMFEATURES KEY PARAMETERS
TC528128B
. Single power supply of 5Vi10% with a built-in
ITEM
VB ..
TC528128BJ-80 ,80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAMTOS H I BA TC528128B
SILICON GATE CMOS t a r g e t S p e C
131,072WORDSX8BITS MULTIPORT DRAM
..
TC531001CP ,120ns; V(dd): -0.5 to +7V; 1M bit (128K word x 8 bit) CMOS MASK ROMIll BIT (128K HORD x 8 BIT) CHOS MASK RON
SILICON GATE CHOS
DESCRI PTION
The TC53lOOlCP/CF i ..
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TC8250P , Real time clock
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TC51WHM516AXBN70
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
TC51WHM516AXBN65,70 Access Times: Package:
P-TFBGA48-0607-0.75AZ (Weight: g typ.)
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
DESCRIPTION The TC51WHM516AXBN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as
2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high speed and low power. The device operates single power supply. The device also features SRAM-like
W/R timing whereby the device is controlled by CE1, OE , and WE on asynchronous. The device has the page access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power
standby.
FEATURES Organized as 2,097,152 words by 16 bits Single power supply voltage of 2.6 to 3.3 V Direct TTL compatibility for all inputs and outputs Deep power-down mode: Memory cell data invalid Page operation mode:
Page read operation by 8 words Logic compatible with SRAM R/W ( WE ) pin Standby current Standby 70 µA
Deep power-down standby 5 µA
PIN ASSIGNMENT (TOP VIEW) PIN NAMES 1 2 3 4 5 6
B I/O9
C I/O10
D VSS I/O12
E VDD I/O13
F I/O15
G I/O16
H A18
(FBGA48)
