TC5012BF ,V(dd): -0.5 to +20V; V(in): -0.5 to +0.5V; 10mA; C2MOS digital integarted circuit silicon monolithicELECTRICAL CHARACTERISTICS (VSS=0V)
CHARACTERISTIC SYMBOL TEST CONDITION -h0 C 25 C
MIN. MAX. M ..
TC5012BP ,V(dd): -0.5 to +20V; V(in): -0.5 to +0.5V; 10mA; C2MOS digital integarted circuit silicon monolithicTiyim2BP/BF CZMOS DIGITAL INTEGRATED CIRCUIT
WWW
TC501ZBP/TC501ZBF HEX N0N-INWRTIN(. T-STATE BU ..
TC5012BP. ,V(dd): -0.5 to +20V; V(in): -0.5 to +0.5V; 10mA; C2MOS digital integarted circuit silicon monolithicTiyim2BP/BF CZMOS DIGITAL INTEGRATED CIRCUIT
WWW
TC501ZBP/TC501ZBF HEX N0N-INWRTIN(. T-STATE BU ..
TC5027BP ,BINARY COUNTERCZMOS DIGITAL INTEGRATED CIRCUIT
SILICON MONOLITHIC
TC5027BP BINARY COUNTER
TC5027BP is four b ..
TC5036AP ,17-Stage High Speed Frequency DividerCZMOS DIGITAL INTEGRATED CIRCUIT
SILICON M0N0LlTHIC
TC5036AP TC5048AP 17-STAGE HIGH SPEED FRE ..
TC5036P ,17-stage high speed frequency dividerBLOCK DIAGRAM
(x-a-,
VDD2 Rf
XT
Irss2
RESET o------
- L -
12 R:2ookn I
L,
TI ..
TC7SZ125AFE ,Dual Bus Buffer 3-State OutputLogic Diagram A G Y G ENX H Z OUT Y IN AL L L H L H Recommended Operating Conditions Characterist ..
TC7SZ125F ,Bus Buffer 3-State OutputTC7SZ125F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ125F,TC7SZ125FU Bus ..
TC7SZ125FU ,Bus Buffer 3-State OutputTC7SZ125F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ125F,TC7SZ125FU Bus ..
TC7SZ126AFE ,Dual Bus Buffer 3-State OutputFeatures High output drive: ±24 mA (min) ＠V = 3 V CC Super high speed operation: t 2.6 ns (ty ..
TC7SZ126F ,Bus Buffer 3-State OutputFeatures TC7SZ126F (SMV) High output drive: ±24 mA (min) @V = 3 V CC Super high speed opera ..
TC7SZ126F ,Bus Buffer 3-State OutputLogic Diagram Truth Table Input Output AOUT YA G Y X L Z G EN L H L H H H X: Don’t Care Z: High Im ..
TC5012BF-TC5012BP-TC5012BP.
V(dd): -0.5 to +20V; V(in): -0.5 to +0.5V; 10mA; C2MOS digital integarted circuit silicon monolithic
Ttyit)n2Eyo)/NF
CZMOS DIGITAL INTEGRATED CIRCUIT
SILICON MONOLITHIC
TC50128P/TC501ZBF HEX N0N-INWRTI" 3-STATE BUFFER
another common for other two Ci
one TTL input.
rcuits,
able for controlling four bit data lines.
‘TCSOIZBP/BF contains six circuits of non-
inverting buffers having three state output.
Since DISABLE inputs to disable the outputs are
provided separately, one common for four circuits and
this is suit-
Large output current enables to directly control
ABSOLUTE MAXIMUM RATINGS
DIP16C3D1sA- P)
MFP l6( F16
PIN ASSIGNMENT
1N2 (i)
1N3 G)
INI Mg ou l
CHARACTERISTIC SYMBOL RATING UNIT
DC Supply Voltage VDD Vss - 0.5 rt, Vss + 20
Input Voltage VIN vSs,-0.ruvim+0.5
Output Voltage VOUT Vss-0.ruhm+o.5 ll
DC Input Current IIN th mA
Power Dissipation PD 300(DIP)/180(MFP) mH
Operating T - o
Temperature Range A 40 L85 C
Storage 0
Temperature Range Tstg -65 V150 C
Lead Temp./Time Tsol 260°C -10 sec
CIRCUIT DIAGRAM
1N1 Ci) OUTl VDD
C) -t''o-"tr OUT
DISABLEl VDD (ir-
DlSABL-El 1
1N1 IE
cum E5:
ouwz E
oum Va
16 VDD
El DISABLEZ
Es] OUT6
E OUTS)
15] fNI
9 OUT4
('10P VIEW)
TRUTH TABLE
DI SABLE INPUT
DON'TCARE
OUTPUT
H [OH IMPEDANCE
TC50128P/BF
RECOMMENDED OPERATING CONDITIONS (Vss=0V) _
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS
DC Supply Voltage VDD 3 - 18 V
Input Voltage VIN 0 - VDD ll
STATIC ELECTRICAL CHARACTERISTICS (Vss=0V)
- O'' q o
CHARACTERISTIC SYMBOL TEST CONDITION VDD 4 C 25 C 85 C UNITS
(v) MIN. MAX. MIN. TYP. MAX. MIN. MAX.
High-Level lrornl:1vA 5 4.95 - 4.95 5.00 - 4.95 -
Von 10 9.95 _ 9.9510.00 - 9.95 -
output Voltage Irw=vss, VDD 15 14.95 - 14.9515.00 - 14.95 - v
Low-Level VoL [1001l<1uA i', - 0.05 - 0.00 0.05 - 0.05
1 - 0.05 - 0.00 0.05 - 0.05
0 t t V 1t e V =V I?
u pu O ("' IN SSs DD 15 - 0.05 - 0.00 0.05 - 0.05 ,/
VOH=4.6V 5 - - - - - - -
. V =2.5V
Output High 0H
IoH V0H=9-5V 5 -1.4 - -1.25 - -1.0 -
Current VOH=13,5V 10 -1.4 - -1.25 - -3.0 -
VIN---VSS, VDD 15 -4.0 - -3.75 - -3.0 - mA
v0L=0.4v 5 3.5 - 3.2 - 2.5 -
t t L =
Ou pu ow IOL 1,hLilir, 10 6.0 - 5.0 - 3.6 -
Current OL 15 26.0 - 24.0 - 18.0 -
V1N=Vss, VDD
VOUT=0-5V. 4.5Y 5 3.5 - 3.5 2.75 - 3.5 -
In ut Hi h =
p g VIH 1ve',','c"1.A,,',1,':1'3'.",,'1,', 10 7.0 - 7.0 5.5 - 7.0 -
Voltage OUT- . , . 15 11.0 - 11.0 8.25 - 11.0 -
IIOUTI<1uA V
L VouT=0.5V. 4.5V 5 - 1.5 - 2.25 1.5 - 1.5
In ut ow = .0 9.0V
p VOUT l V, w 10 - 3.0 - 4.5 3. - 3.0
Voltage VII, VOUT=1.5V,13.5
15 - 4.0 - 6.75 4.0 - 4.0
|IOUTE<1UA
In ut "H" 11H VIH=18V 18 - 0.3 - 10-5 0.3 - 1.0
p Level
Current Level 111 VIL=0V 18 - -0.3 - -10 5 -0.3 - -1.0
3-State "H" 4
I ll =18V 18 - 0.5 -. IO- 0.5 - 30
Output Level DH OUT
Leakage "L" I -4 HA
Current Level DL VOUT=0V 18 - -0.5 - -10 -0.5 - -30
Quiescent 5 - 4.0 - 0.002 4.0 - 30
Device Current IDD VIN=VSS)VDD 10 - 8.0 - 0.004 8.0 - 60
A 15 - 16.0 _ 0.008 16.0 - 120
A11 valid input combinations.
T050128P/ BF
DYNAMI C ELECTRI CAL' CHARACTERI STI CS
(Ta=25°C, VSS=0V, CL=50pF)
CHARACTERISTIC SYMBOL TEST CONDITION VDD(V) MIN. TYP. MAX. UNITS
Output Transition Time tTLH 13 - 123 :83
(Low to High) 15 - 50 100
Output Transition Time t 13 - Z3 238
Propagation Delay Time t 5 - 320 430
(IN OUT) pLH 10 - 150 220
- 15 - 110 200
Propagation Delay Time t 5 - 280 380
pHL 10 - 130 220
(IN - OUT) 15 - 100 200 ns
. ' 5 - 320 500
Three State Disable Time tpHZ RL=1k9 10 - 280 450
(DISABLE - OUT) 15 - 250 400
. . 5 - 420 600
Three State Disable Time
(DISABLE OUT) tPLZ RL=1kQ 10 - 320 500
- 15 - 270 450
Three State Disable Time 5 - 280 hoo
(DISABLE - OUT) 15 - 120 180
5 - 300 450
Th St t Df bl Ti
ree a e Isa e 1me t ZL RL=1kfl lO - .150 225
(DISABLE - OUT) p 15 - 130 200
Input Capacitance CIN - 7.5 15 pF
‘NAVEFORM FOR MEASUREMENT OF DYNAMIC CHARACTERISTICS
WAVEFORM l WAVEFORM 2 20m; 20ns
90% a 909
DISABLE sim 5056
INPUT 321096 Viii
tPLZ ' thL
OUTPUT "
OUTPUT 10% 50%
tpHZ t ZH
--C= 90%
OUTPUT 50%
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